Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …

Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …

In this Letter, we report a high-performance NiO/β-Ga 2 O 3 pn heterojunction diode with an
optimized interface by annealing. The electrical characteristics of the pn diode without …

A heterojunction is an essential strategy for multispectral energy-conservation
photodetection for its ability to separate photogenerated electron–hole pairs and tune the …

LiGa5O8, an ultrawide bandgap semiconductor, is discovered to exhibit p‐type conductivity
at room temperature, making it the widest bandgap p‐type oxide semiconductor known to …

Low-temperature processable p-type transparent conductors are essential for flexible
transparent electronics. Current research focuses primarily on wide-band gap copper-based …

Field-plated vertical Ga 2 O 3 rectifiers were operated up to 600 K with reverse breakdown
voltage (VB) of 750 V, 950 V at 500 K and 1460 V at 400 K. The barrier height was 1.3 eV at …

β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is
considered to be one of the most promising candidates for power devices including field …

Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental
monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction …

In this work, a high-performance self-powered deep-ultraviolet (UV) CuI/Ga 2 O 3
heterojunction photodetector was proposed by pulsed laser deposition (PLD) and vacuum …