We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

Transport phenomena in Schottky diodes are analyzed at high injection levels of minority
carriers. It is shown that the correct description of these phenomena requires that the mode …

The repetitive avalanche reliability of power rectifiers is crucial to the safe operation of the
hard switching power converters under extreme conditions as well as transient voltage …

Современная цивилизация нуждается во все более потребляемых источниках энергии,
чтобы поддерживать прогресс в обществе. Атомная энергия и преобразование …

Isothermal forward current–voltage characteristics of high-voltage 4H-SiC junction barrier
Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were …

Optical switch-on of a high-voltage (12 kV class) 4H-SiC thyristor to a current I= 100 A is
reported. The importance of the dI/dt ramp and the turn-on spread for obtaining the …

This work presents thermal analysis results of surge current test performed on pressed-pack
encapsulated SiC Schottky Diodes. An original method for temperature evaluation during …

In this study, the dV/dt ruggedness of commercial 4H-SiC Schottky diodes C3D02060A
(Wolfspeed) with DC blocking voltage of 600 V and continuous forward current of 2 A was …

It has been demonstrated that the field dependence of the electron and hole mobility
strongly affects the carrier distribution in semiconductor structures under quasineutral …

An analytical expression is derived for the current–voltage characteristic of a Schottky diode
at a high injection level of minority carriers. It is shown that, even at very high current …