The temperature dependence of photoconductivity in p-GaSe crystals with different initial
(having at 77 K) dark resistivities (ρ 77= 2· 103÷ 7· 106 Ω· cm) was experimentally studied in …

The effect of the external and intracrystalline factors (temperature, light, and the magnitude
of the initial dark resistivity of the sample, electric field, chemical nature, and amount of the …

The effect of doping with holmium (Ho) and erbium (Er) rare-earth elements (REE) on the
main parameters and characteristics of photocells based on p-GaSe/n-InSe heterostructures …

The effects of the electric field, temperature, and initial value of the dark resistivity on the
relaxation processes of intrinsic photoconductivity in single crystals of gallium monoselenide …

Under various external and intracrystalline conditions (various temperatures, electric field
strengths, initial values of the dark resistivity of the sample, the content and chemical nature …

Photoconductivity characteristic of undoped and gadolinium (Gd)/dysprosium (Dy) co-doped
layered p-GaSe semiconductor has been experimentally investigated. A model is proposed …

The photoconductivity of p-GaSe single crystals doped with rare-earth elements
(REEs)(gadolinium and erbium) has been studied at doping levels in the range 10–5≤ N …

This paper presents a detailed experimental study of extrinsic photoelectric effects caused
by combined excitation—induced extrinsic photoconductivity (IEP) and optical and thermal …

The photoelectret property of a high-density polyethylene (HDPE)-semiconductor (n-InSe)
composite is investigated. It was found that the magnitude of the photoelectret potential non …

The principal characteristics of intrinsic photoconductivity and the spectra of negative
photoconductivity induced by impurity photoconductivity and the infrared quenching of …