Cubic silicon carbide as a potential photovoltaic material
M Syväjärvi, Q Ma, V Jokubavicius, A Galeckas… - Solar Energy Materials …, 2016 - Elsevier
In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in
terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To …
terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To …
Laser assisted doping of silicon carbide thin films grown by pulsed laser deposition
E Paneerselvam, VK Lakshmi Narayanan… - Journal of Electronic …, 2019 - Springer
Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on
magnesium oxide [MgO (100)] substrates at a substrate temperature of 800° C. Besides, p …
magnesium oxide [MgO (100)] substrates at a substrate temperature of 800° C. Besides, p …
Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means
A Mekys, V Rumbauskas, J Storasta… - Nuclear Instruments and …, 2014 - Elsevier
Two sets of p-and n-conductivity type silicon samples have been irradiated by 6.6 MeV
electrons with fluence from 1 to 5 (× 10 16) e/cm 2. Hall and magnetoresistivity measurement …
electrons with fluence from 1 to 5 (× 10 16) e/cm 2. Hall and magnetoresistivity measurement …
Hall effect and magnetoresistance investigation of fast electron irradiated silicon
A Mekys, V Rumbauskas, J Storasta… - Lithuanian Journal of …, 2014 - lmaleidykla.lt
A set of n-type silicon samples has been irradiated by 6.6 MeV electrons with doses from 1
to 5 (× 10 16) e/cm 2, and temperature dependences of Hall and magnetoresistance …
to 5 (× 10 16) e/cm 2, and temperature dependences of Hall and magnetoresistance …
Krūvininkų sklaidos ir terminės aktyvacijos ypatumai dideliais ytėkiais apšvitintame silicyje
V Rumbauskas - 2016 - epublications.vu.lt
Abstract [eng] In this work is considered the peculiarities of carrier scattering in silicon
irradiated with fast electrons and reactor neutrons, by large fluences, examining the …
irradiated with fast electrons and reactor neutrons, by large fluences, examining the …
Peculiarities of carrier scattering and thermal emission in large fluence irradiated silicon
V Rumbauskas - 2016 - epublications.vu.lt
Abstract [eng] In this work is considered the peculiarities of carrier scattering in silicon
irradiated with fast electrons and reactor neutrons, by large fluences, examining the …
irradiated with fast electrons and reactor neutrons, by large fluences, examining the …
Carrier mobility modeling in highly inhomogeneous semiconductors
A Mekys, V Rumbauskas, L Andrulionis… - arXiv preprint arXiv …, 2015 - arxiv.org
The large scale various shapes and orientation defects influence into carrier scattering was
theoretically analyzed using Monte Carlo method and compared to the experimental …
theoretically analyzed using Monte Carlo method and compared to the experimental …
Polytype Inclusions in Cubic Silicon Carbide
R Vasiliauskas, P Malinovskis, A Mekys… - Materials Science …, 2013 - Trans Tech Publ
The 3C-SiC layers on nominally on-axis 6H-SiC substrates were grown using sublimation
epitaxy. More than 90% coverage by 3C-SiC is typically achieved at growth temperature of …
epitaxy. More than 90% coverage by 3C-SiC is typically achieved at growth temperature of …