Gate spacer structure and method of forming same
WT Chien, LY Chen, YH Liu, TL Lee… - US Patent 10,868,142, 2020 - Google Patents
(57) ABSTRACT A semiconductor device and a method of forming the same are provided.
The method includes forming a sacrificial gate structure over an active region. A first spacer …
The method includes forming a sacrificial gate structure over an active region. A first spacer …
Semiconductor device with air gap on gate structure and method for forming the same
TL Lin, WU Che-Chen, CL Chuang, YM Lin… - US Patent …, 2022 - Google Patents
(57) ABSTRACT A semiconductor device structure is provided. The semicon ductor device
structure includes a source/drain contact struc ture formed over a semiconductor substrate …
structure includes a source/drain contact struc ture formed over a semiconductor substrate …
Semiconductor device structure and methods of forming the same
L Huang, YU Li-Zhen, CC Chuang, KL Cheng… - US Patent …, 2022 - Google Patents
A semiconductor device structure, along with methods of forming such, are described. The
structure includes a substrate, a source/drain contact disposed over the substrate, a first …
structure includes a substrate, a source/drain contact disposed over the substrate, a first …
Semiconductor device and method
CH Chen, CM Lee, FK Yang, MY Wang - US Patent 11,489,053, 2022 - Google Patents
In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region
adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial …
adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial …
Seal material for air gaps in semiconductor devices
SS Liang, CH Wang, KC Lin, T Ueno… - US Patent …, 2022 - Google Patents
The present disclosure relates to a semiconductor device including first and second
terminals formed on a fin region and a seal layer formed between the first and second …
terminals formed on a fin region and a seal layer formed between the first and second …
Seal material for air gaps in semiconductor devices
SS Liang, CH Wang, KC Lin, T Ueno… - US Patent …, 2022 - Google Patents
The present disclosure relates to a semiconductor device including first and second
terminals formed on a fin region and a seal layer formed between the first and second …
terminals formed on a fin region and a seal layer formed between the first and second …
Transistors and methods of forming transistors
Y Fukushima, T Imamoto - US Patent 11,038,038, 2021 - Google Patents
Some embodiments include a transistor having a gate, with the gate being over a
semiconductor base. The gate has sidewalls. A channel region is under the gate. Spacers …
semiconductor base. The gate has sidewalls. A channel region is under the gate. Spacers …
Airgap gate spacer
R Xie, K Cheng, J Frougier, C Park - US Patent 11,876,114, 2024 - Google Patents
A semiconductor device includes a gate structure that is formed upon and around a channel
fin. The device further includes a source or drain (S/D) region connected to the fin. A spacer …
fin. The device further includes a source or drain (S/D) region connected to the fin. A spacer …
Air Spacers For Semiconductor Devices
CH Chang, L Huang, ST Wang, CC Chuang… - US Patent App. 16 …, 2022 - Google Patents
US20220028999A1 - Air Spacers For Semiconductor Devices - Google Patents
US20220028999A1 - Air Spacers For Semiconductor Devices - Google Patents Air Spacers …
US20220028999A1 - Air Spacers For Semiconductor Devices - Google Patents Air Spacers …
Gate spacer structure and method of forming same
WT Chien, LY Chen, YH Liu, TL Lee… - US Patent 11,508,831, 2022 - Google Patents
(57) ABSTRACT A semiconductor device and a method of forming the same are provided.
The method includes forming a sacrificial gate structure over an active region. A first spacer …
The method includes forming a sacrificial gate structure over an active region. A first spacer …