A review of the synthesis, fabrication, and recent advances in mixed dimensional heterostructures for optoelectronic devices applications

W Ahmad, AK Tareen, K Khan, M Khan, Q Khan… - Applied Materials …, 2023 - Elsevier
Low dimensional materials are promising candidates for the construction of electronic and
optoelectronic devices owing to their novel electronic structure and exciting physiochemical …

Mixed dimensional transition metal dichalcogenides (TMDs) vdW heterostructure based photodetectors: A review

V Selamneni, P Sahatiya - Microelectronic Engineering, 2023 - Elsevier
Over the last two decades, low-dimensional nanomaterials such as zero-dimensional (0D),
one-dimensional (1D), and two-dimensional (2D) have been used as functional materials in …

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

L Li, Q Deng, Y Sun, J Zhang, T Zheng… - Advanced Functional …, 2023 - Wiley Online Library
With continuous size scaling, the surface dangling bonds and short‐channel effects will
degrade silicon based transistor performance. Thus, it is of great importance to seek new …

Tunable Contacts of Bi2O2Se Nanosheets MSM Photodetectors by Metal‐Assisted Transfer Approach for Self‐Powered Near‐Infrared Photodetection

G Wang, F Liu, R Chen, M Wang, Y Yin, J Zhang, Z Sa… - Small, 2024 - Wiley Online Library
Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal–
semiconductor contact is always independent on the work function, which challenges the …

Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition

X Pang, Y Wang, Y Zhu, Z Zhang, D Xiang, X Ge… - Nature …, 2024 - nature.com
In-sensor processing has the potential to reduce the energy consumption and hardware
complexity of motion detection and recognition. However, the state-of-the-art all-in-one array …

Logic Computing Field-Effect Transistors Based on a Monolayer WSe2 Homojunction for the Semi-adder and Decoder

X Li, Z Wang, X Tang, P Yuan, L Li, C Shen, Y Jiang… - Nano Letters, 2024 - ACS Publications
Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for
next-generation computing hardware. However, exploring the cascade design of FETs for …

Broadband photodetector based on MoS2/Ge heterojunction for optoelectronic applications

M Zumuukhorol, Z Khurelbaatar, DH Kim, KH Shim… - Vacuum, 2023 - Elsevier
In this work, we demonstrate high quality MoS 2/i-Ge heterojunction photodetector (PD) and
its optoelectrical properties are analyzed over a broad spectral range which is compared …

Bidirectional Photoresponse in a Mixed-Dimensional MoS2/Ge Heterostructure and Its Optic-Neural Synaptic Behavior for Colored Pattern Recognition

Y Zhang, B Wang, Z Han, X Shi, N Zhang, T Miao… - ACS …, 2023 - ACS Publications
Realization of multi-functional synaptic devices is imperative to deploy high-performance
brain-like vision systems. Here, a junction field-effect transistor based on a two-dimensional …

Adaptative machine vision with microsecond-level accurate perception beyond human retina

L Li, S Li, W Wang, J Zhang, Y Sun, Q Deng… - Nature …, 2024 - nature.com
Visual adaptive devices have potential to simplify circuits and algorithms in machine vision
systems to adapt and perceive images with varying brightness levels, which is however …

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

SE Yu, HJ Lee, M Kim, S Im, YT Lee - ACS nano, 2024 - ACS Publications
High-performance and low operating voltage are becoming increasingly significant device
parameters to meet the needs of future integrated circuit (IC) processors and ensure their …