Strong Metal–Sulfur Hybridization in the Conduction Band of the Quasi-One-Dimensional Transition-Metal Trichalcogenides: TiS3 and ZrS3
The elemental contributions to the conduction bands of the transition-metal trichalcogenides
TiS3 and ZrS3 were examined using X-ray absorption spectroscopy, at the Ti and S 2p …
TiS3 and ZrS3 were examined using X-ray absorption spectroscopy, at the Ti and S 2p …
Surface termination and Schottky-barrier formation of In4Se3 (001)
The surface termination of In 4 Se 3 (001) and the interface of this layered trichalcogenide,
with Au, was examined using x-ray photoemission spectroscopy. Low energy electron …
with Au, was examined using x-ray photoemission spectroscopy. Low energy electron …
A time-fractional dual-phase-lag framework to investigate transistors with TMTC channels (TiS3, In4Se3) and size-dependent properties
MH Fotovvat, Z Shomali - Micro and Nanostructures, 2022 - Elsevier
In this study, a time fractional dual-phase-lag model with temperature jump boundary
condition as a choice for the Fourier's law replacement in thermal modeling of transistors, is …
condition as a choice for the Fourier's law replacement in thermal modeling of transistors, is …
Self-assembled indium nanostructures formation on InSe (0001) surface
PV Galiy, TM Nenchuk, A Ciszewski, P Mazur… - Applied …, 2020 - Springer
The surfaces of 2D layered crystals are one among most perspective templates for self-
assembling of metal nanostructures due to the dewetting. The initial InSe (0001) surface as …
assembling of metal nanostructures due to the dewetting. The initial InSe (0001) surface as …
Contact resistance parallel model for edge-contacted 2D material back-gate FET
F Cai, G Deng, X Li, F Lin - Electronics, 2020 - mdpi.com
Because 2D materials have adjust band gap, high mobility ratio, bipolar, anisotropy and
flexibility characters, they have become the new direction for FET's channel materials …
flexibility characters, they have become the new direction for FET's channel materials …