Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently
gaining momentum in semiconductor processing, because of the increasing need for …

The surface structures, defects and dynamics of self-assembled monolayers (SAMs) on Au
(111) are reviewed. In the case of the well-known c (4× 2) and√ 3×√ 3 R30° surface …

Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …

To investigate the effects of the phase state (ordered or disordered) of self-assembled
monolayers (SAMs) on the growth mode of pentacene films and the performance of organic …

Area-selective atomic layer deposition (ALD) is currently attracting significant interest as a
solution to the current challenges in alignment that limit the development of sub-5 nm …

Next generation 3D electronic devices will require novel processing methods. Area selective
atomic layer deposition (ALD) of robust films has the opportunity to play an important role in …

The stability of self-assembled monolayers (SAMs) at elevated temperatures is of
considerable technological importance. The thermal stability of 1-octadecanethiol (ODT), 16 …

This paper describes the photoinduced switching of conductance in tunneling junctions
comprising self-assembled monolayers of a spiropyran moiety using eutectic Ga–In top …

Functionalization of nanoparticles with specific ligands is helpful to control specific
diagnostic and therapeutic responses such as protein adsorption, cell targeting, and …

To enable area-selective atomic layer deposition (AS-ALD), self-assembled monolayers
(SAMs) have been used as the surface inhibitor to block a variety of ALD processes. The …