A key efficiency-limiting factor in silicon-based photovoltaic (PV) devices is the quality of the
silicon material itself. With evolving cell architectures that better address other efficiency-loss …

This article continues the review of fundamental physical properties of iron and its
complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied …

It is known that the interstitial iron concentration in silicon is reduced after annealing silicon
wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride …

Heterogeneous iron precipitation in silicon was studied experimentally by measuring the
gettering efficiency of oxide precipitate density of 1× 10 10 cm− 3⁠. The wafers were …

Oxygen precipitates are among the most detrimental oxygen‐related silicon bulk defects
formed during solar cell manufacturing. These defects are formed only during high …

The basic physical principles and mechanisms of gettering of metal impurities in silicon are
well established. However, a predictive model of gettering that would enable one to …

Lifetime-killing impurities are often present in the Si used to manufacture electron devices.
They degrade the performance of electron devices, such as the efficiency in solar cells or the …

In this paper, the precipitation kinetics of iron in multicrystalline silicon during moderate
temperature annealing are systematically studied with respect to annealing time …

Experimental evidence is provided that gettering of iron by polycrystalline silicon
(polysilicon) is driven by a combination of two gettering mechanisms, segregation and …

Using the atom probe tomography, transmission electron microscopy, and ab initio
calculations, we investigate the three-dimensional distributions of oxygen atoms segregating …