Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film
Resistive Switching in oxides has offered new opportunities for developing resistive random
access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along …
access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along …
Multilevel resistive switching with negative differential resistance in Al/NiO/ZnFe2O4/ITO ReRAM device
Abstract The Resistive Random Access Memory devices have emerged as an energy-
efficient alternative to Von Neumann computers by enabling in-memory computing. Here we …
efficient alternative to Von Neumann computers by enabling in-memory computing. Here we …
Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films
M Kim, JY Son - Journal of Materials Science, 2024 - Springer
Polycrystalline NiO thin films with controlled oxygen vacancy concentration were deposited
on Pt/Ta/SiO2/Si substrates using RF sputtering. Auger electron spectroscopy experiments …
on Pt/Ta/SiO2/Si substrates using RF sputtering. Auger electron spectroscopy experiments …
Point contact resistive switching memory based on self-formed interface of Al/ITO
Q Li, L Qiu, X Wei, B Dai, H Zeng - Scientific reports, 2016 - nature.com
Point contact resistive switching random access memory (RRAM) has been achieved by
directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room …
directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room …
Interpreting the presence of an additional oxide layer in analysis of metal oxides–metal interfaces in atom probe tomography
M Bachhav, G Pawar, F Vurpillot… - The Journal of …, 2018 - ACS Publications
Atom Probe Tomography (APT) analysis of specimens embedded with metal oxide/metal
leads to nonintuitive observations of a very thin layer of oxide at the interface due to oxygen …
leads to nonintuitive observations of a very thin layer of oxide at the interface due to oxygen …
Three-dimensional image of cleavage bodies in nuclei is configured using gas cluster ion beam with time-of-flight secondary ion mass spectrometry
N Masaki, I Ishizaki, T Hayasaka, GL Fisher… - Scientific Reports, 2015 - nature.com
Structural variations of DNA in nuclei are deeply related with development, aging and
diseases through transcriptional regulation. In order to bare cross sections of samples …
diseases through transcriptional regulation. In order to bare cross sections of samples …
[图书][B] Resistance switching of electrodeposited cuprous oxide
S Yazdanparast - 2015 - search.proquest.com
In this work, the resistance switching behavior of electrodeposited cuprous oxide (Cu 2 O)
thin films in Au/Cu 2 O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial …
thin films in Au/Cu 2 O/top electrode (Pt, Au-Pd, Al) cells was studied. After an initial …
[引用][C] Lithium Niobium Oxide Multifunctional Materials and Applications in Neuromorphic Computing
MB Tellekamp - 2017 - Georgia Institute of Technology,