The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

The next generation wireless network, 5G, is expected to provide ubiquitous connections to
billions of devices as well as to unlock many new services through multigigabit-per-second …

This paper presents a high-efficiency gallium nitride Doherty power amplifier (DPA) using an
integrated compensating reactance (CR) for broadband operation. With an additional …

This paper presents a novel power combining architecture, referred to as distributed efficient
power amplifier (DEPA) that mitigates the inherent bandwidth limiting factors in a Doherty …

There is an ever increasing demand for both function integration and improved performance
in wireless communication devices. Therefore, the integration of efficient linearizing …

The effect of the output impedance of peaking power amplifier (PA) on Doherty PAs (DPAs)
is analyzed in this paper. In the design procedure of DPAs, the ideal case is that the output …

We present the design and development of a Ka-band Doherty power amplifier (DPA) that
achieves high efficiency at power backoff (PBO) using a new load modulation scheme and a …

This article presents a generalized theory and new design methodology for reverse-load-
modulated dual-branch (RMDB) power amplifiers (PAs), which uses a current-biased …

In this paper, functionality of the Doherty power amplifiers (DPAs) along with their design
constraints such as DPA combining techniques are reviewed. This is because power …

This paper presents a voltage-combined CMOS Doherty power amplifier (PA) based on a
transformer. The dynamic load modulation of the two-way transformer is analyzed in detail. A …