Excitonic mechanisms of defect formation and of sputtering from surfaces, induced as a
consequence of exciton relaxation, are effective in a limited class of wide-gap materials …

The surfaces of solar cells are often textured to increase their capacity to absorb light. This
optical benefit is partially offset, however, by an increase in carrier recombination at or near …

To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is
moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In …

The electron field emission properties of the (111) 1× 1: H surface of natural semiconducting
(p‐type) diamond have been examined with simultaneous field emission and photoemission …

X-ray photoelectron spectroscopy (XPS) combined with reflection electron energy loss
spectroscopy (REELS) were used to determine the energy-band parameters, valence-band …

We have identified a resist material that is suitable for high‐speed, nanometer‐scale
scanning probe lithography (SPL) using the atomic force microscope (AFM). The material is …

Inversion n-channel GaN metal-oxide-semiconductor field-effect-transistors (MOSFETs)
using atomic-layer-deposited Al 2 O 3 as a gate dielectric have been fabricated, showing …

Quantitative dopant profile measurements are performed on a nanometer scale by scanning
capacitance microscopy (SCM). An atomic force microscope is used to position a nanometer …

Analog Integrated Circuits (ICs) are one of the top targets for counterfeiting. However, the
security of analog Intellectual Property (IP) is not well investigated as its digital counterpart …

High-performance inversion-type enhancement-mode n-channel MOSFETs on In-rich In
0.75 Ga 0.25 As using ALD Al 2 O 3 as high-k gate dielectrics are demonstrated. The …