We investigate a ballistic InSb nanoflag-based Josephson junction with Nb superconducting
contacts. The high transparency of the superconductor-semiconductor interfaces enables …

High-quality III–V narrow bandgap semiconductor materials with strong spin–orbit coupling
and large Landé g-factor provide a promising platform for next-generation applications in the …

A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the
physical origin and the controllability of the spin–orbit interaction in a narrow bandgap …

Exceptional points (EPs) are spectral degeneracies of non-Hermitian (NH) systems where
eigenvalues and eigenvectors coalesce, inducing unique topological phases that have no …

InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …

InSb is one of the promising candidates to realize a topological state through proximity
induced superconductivity in a material with strong spin–orbit interactions. In two …

Indium-antimonide (In Sb) two-dimensional electron gases (2DEGs) have a unique
combination of material properties: high electron mobility, a strong spin-orbit interaction, a …

Quantum transport measurements are performed in gate-defined, high-quality, two-
dimensional hole and electron systems in an undoped InSb quantum well. For both …

We report on the transport study of a double quantum dot (DQD) device made from a
freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by …

A theoretical investigation on neutral excitons confined to a mono-layer (ML) semiconductor
transition metal dichalcogenide (TMDC) materials under the influence of elliptically …