Advances in solution-processed near-infrared light-emitting diodes

M Vasilopoulou, A Fakharuddin… - Nature …, 2021 - nature.com
Near-infrared light-emitting diodes based on solution-processed semiconductors, such as
organics, halide perovskites and colloidal quantum dots, have emerged as a viable …

2D material infrared photonics and plasmonics

A Elbanna, H Jiang, Q Fu, JF Zhu, Y Liu, M Zhao… - ACS …, 2023 - ACS Publications
Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black
phosphorus, MXenes, and semimetals have attracted extensive and widespread interest …

Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices

T Zhang, M Li, J Chen, Y Wang, L Miao, Y Lu… - Materials Science and …, 2022 - Elsevier
The desire for developing ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

J Yoon, S Jo, IS Chun, I Jung, HS Kim, M Meitl… - Nature, 2010 - nature.com
Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for
many applications, owing to their direct bandgaps and high electron mobilities. Examples …

Graphene/semiconductor hybrid heterostructures for optoelectronic device applications

C Xie, Y Wang, ZX Zhang, D Wang, LB Luo - Nano Today, 2018 - Elsevier
As one of the most appealing two-dimensional materials, graphene (Gr) has attracted
tremendous research interest in optoelectronic device applications for its plenty of …

Impact of surface chemistry

GA Somorjai, Y Li - Proceedings of the National Academy of …, 2011 - National Acad Sciences
The applications of molecular surface chemistry in heterogeneous catalyst technology,
semiconductor-based technology, medical technology, anticorrosion and lubricant …

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth

AM Munshi, DL Dheeraj, VT Fauske, DC Kim… - Nano …, 2012 - ACS Publications
By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad
range of semiconductors on graphene can in principle be achieved. A generic atomic model …

Heterogeneously integrated III–V-on-lithium niobate broadband light sources and photodetectors

X Zhang, X Liu, R Ma, Z Chen, Z Yang, Y Han… - Optics Letters, 2022 - opg.optica.org
Heterogeneous integration of III–V active devices on lithium niobate-on-insulator (LNOI)
photonic circuits enable fully integrated transceivers. Here we present the co-integration of …

Metal Halide Perovskites for Red‐Emission Light‐Emitting Diodes

K Wei, B Liang, C Sun, Y Jiang, M Yuan - Small Structures, 2022 - Wiley Online Library
Metal halide perovskites (MHPs) exhibit remarkable optoelectronic properties, thus attracting
widespread attention. Over the last several years, the external quantum efficiencies of …

Materials characterization by synchrotron x-ray microprobes and nanoprobes

L Mino, E Borfecchia, J Segura-Ruiz, C Giannini… - Reviews of Modern …, 2018 - APS
In recent years synchrotron x-ray microprobes and nanoprobes have emerged as key
characterization tools with a remarkable impact for different scientific fields including solid …