A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact
The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
S Mahapatra, N Parihar - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
A stochastic framework for the time kinetics of interface and bulk oxide traps for BTI, SILC, and TDDB in MOSFETs
S Kumar, R Anandkrishnan, N Parihar… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
A stochastic reaction-diffusion drift model is used to simulate the time kinetics of interface
and bulk oxide traps responsible for bias temperature instability (BTI), stress-induced …
and bulk oxide traps responsible for bias temperature instability (BTI), stress-induced …
A comparative analysis of NBTI variability and TDDS in GF HKMG planar p-MOSFETs and RMG HKMG p-FinFETs
N Parihar, R Anandkrishnan… - … on Electron Devices, 2019 - ieeexplore.ieee.org
The time kinetics of threshold voltage shift (ΔV T) is measured for negative-bias temperature
instability (NBTI) and time-dependent defect spectroscopy (TDDS) experiments by an ultra …
instability (NBTI) and time-dependent defect spectroscopy (TDDS) experiments by an ultra …
A stochastic hole trapping-detrapping framework for NBTI, TDDS and RTN
S Bhagdikar, S Mahapatra - 2019 International Conference on …, 2019 - ieeexplore.ieee.org
A stochastic framework is presented to model hole trapping and detrapping into and out of
individual defects that are present in the gate dielectric of a p-channel MOS transistor. The …
individual defects that are present in the gate dielectric of a p-channel MOS transistor. The …
Statistical Observations of Three Co-Existing NBTI Behaviors in 28 nm HKMG by On-Chip Monitor With Less Recovery Impact
Y Fu, W Wang, X Zhong, M Li, Z Li… - … on Circuits and …, 2022 - ieeexplore.ieee.org
An on-chip digital sensor has been demonstrated in 28nm High-k Metal Gate (HKMG) for
bias temperature instability (BTI) statistical characterization with the benefits: fast statistical …
bias temperature instability (BTI) statistical characterization with the benefits: fast statistical …
[PDF][PDF] A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact
M Choi, V Moroz - academia.edu
The time kinetics of interface trap generation and passivation (1NIT) and its contribution
(1VIT) during and after negative bias temperature instability (NBTI) stress is calculated by …
(1VIT) during and after negative bias temperature instability (NBTI) stress is calculated by …
6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments
S Bhagdikar, S Mahapatra - 2020 International Conference on …, 2020 - ieeexplore.ieee.org
A systematic review and comparison of existing charge trapping models in literature is
performed. A framework for simulating hole trapping/de-trapping kinetics is established to …
performed. A framework for simulating hole trapping/de-trapping kinetics is established to …