We propose a pioneering approach that integrates optimization algorithms and technology
computer-aided design to automatically optimize laterally-diffused metal-oxide …

In this paper, a dual-gate laterally double-diffused metal-oxide-semiconductor (DG-LDMOS)
device with shallow trench isolation (STI) and sinker at the source side has been proposed …

BACKGROUND The need for transistors which can provide high power drive capacity on
semiconductor integrated circuits led to the development of lateral double-diffused metal …

Apparatus and associated methods relate to controlling an electric field profile within a drift
region of an LDMOS device using first and second RESURF regions. The first RESURF …

Gallium oxide has recently emerged as a promising semiconductor material for high voltage
switch applications owing to its ultra-wide band gap of∼ 4.8 eV and the corresponding …

In this paper, low cost 1200V UHV LDMOS device has been proposed. As BVD and Ron are
contradictory, so to make low Ron, high breakdown voltage is the challenge of this paper …

A comprehensive analysis of the LDMOSFET for base station power amplifiers is presented
in this paper, mainly focusing on the effect of key device parameters on breakdown voltage …

LDMOS transistor has been investigated. The parameters of LDMOS device namely
breakdown voltage (BV), onresistance, transconductance output conductance, cut off …

We have analyzed the switching characteristics of the proposed device in detail by changing
the load resistance RL and the gate resistance RG. The field plate of the proposed device …

Integrated RF power amplifiers circuits for wireless applications require devices with high
drain current (ID), trans-conductance (gm), Breakdown voltage (BV), cutoff frequency (fT) & …