The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …

The limited memory retention for a ferroelectric field-effect transistor has prevented the
commercialization of its nonvolatile memory potential using the commercially available …

With the emergence of ferroelectric HfO 2-and ZrO 2-based thin films, the topic of
ferroelectric memories has been experiencing a renaissance. These novel ferroelectric …

FeFETs with 5-nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) have been demonstrated in memory
operations for the ON/OFF current ratio> 10 4 at zero gate voltage and a memory window …

An integrated circuit comprises a ferroelectric memory cell comprising a ferroelectric film
comprising a binary oxide ferroelectric with the formula XO, where X represents a transition …

We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-
thin (5.5 nm) Hf 0.8 Zr 0.2 O 2 (HZO) fabricated using a self-aligned gate last process. The …

In this paper potential strategies to overcome the endurance limitations of hafnium oxide
based ferroelectric field effect transistors are discussed. These pathways are based on the …

The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf 0.5
Zr 0.5 O 2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics …

We demonstrate for the first time ZrO 2 ferroelectric field-effect transistors (FeFETs) for
embedded non-volatile memory applications. Multiple sweeps of polarization versus voltage …

We demonstrate a novel method using electric field cycling to induce a phase transition in Hf
x Zr 1− x O 2 to reach the morphotropic phase boundary of tetragonal and orthorhombic …