A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …
high-performance computing and storage devices. As a result, continuous work on …
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …
We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
[HTML][HTML] A flexible Hf0. 5Zr0. 5O2 thin film with highly robust ferroelectricity
X Zhou, H Sun, J Li, X Du, H Wang, Z Luo, Z Wang… - Journal of …, 2024 - Elsevier
Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-
growing demands for nonvolatile data storage in wearable electronic devices. Here, high …
growing demands for nonvolatile data storage in wearable electronic devices. Here, high …
Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO2 Ferroelectric Thin Films
T Huang, YC Li, CF Chen, XX Li, ZY Gu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In this letter, gallium doped HfO2 (Ga: HfO ferroelectric capacitors were fabricated and
characterized. It is demonstrated that the W/Ga: HfO2/W capacitors under 650° C rapid …
characterized. It is demonstrated that the W/Ga: HfO2/W capacitors under 650° C rapid …
HfO₂-based ferroelectric optoelectronic memcapacitors
We report one-capacitor (1C) architecture HfO2-based ferroelectric optoelectronic
memcapacitors (FOMs), empowering with photoelectric perception and memory functions …
memcapacitors (FOMs), empowering with photoelectric perception and memory functions …
ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics
The HfxZryO2 with high Zr content is demonstrated to form the anti-ferroelectric tetragonal
phase (AFE t-phase). The peak dielectric constant (47) of Hf0. 2Zr0. 8O2 is achieved. By …
phase (AFE t-phase). The peak dielectric constant (47) of Hf0. 2Zr0. 8O2 is achieved. By …
High-κ Hf0. 3Zr0. 7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose
For the miniaturization of dynamic random-access memory (DRAM), it is necessary to obtain
low equivalent oxide thickness (EOT) and low leakage capacitor materials with …
low equivalent oxide thickness (EOT) and low leakage capacitor materials with …
Structural characteristics and polarization switching behaviors in HfO2-ZrO2 ferroelectric nanolaminates
Z Yang, B Zeng, C Ju, J Liao, S Zheng, M Liao… - Journal of Alloys and …, 2024 - Elsevier
Abstract Hf 0.5 Zr 0.5 O 2 solid solution ferroelectric thin film is an extremely promising
candidate for ferroelectric memories due to the high compatibility with silicon-based …
candidate for ferroelectric memories due to the high compatibility with silicon-based …
Oxygen Vacancy Modulation with TiO2 Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O2 Thin Films
X Wang, M Wu, B Cui, Y Li, Y Wu, Y Wen… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Since the discovery of ferroelectric switching in hafnium-based thin films, this family of
materials has garnered significant attention. However, their higher coercive field not only …
materials has garnered significant attention. However, their higher coercive field not only …
Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes
Abstract Tuning ferroelectricity of Hf0. 5Zr0. 5O2 is crucial for facilitating its practical
applications in various fields, including in-memory and neuromorphic computing. Previous …
applications in various fields, including in-memory and neuromorphic computing. Previous …