Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

VV Afanas'ev, G Delie, M Houssa… - Journal of Physics …, 2020 - iopscience.iop.org
The article overviews experimental results obtained by applying internal photoemission
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …

[HTML][HTML] Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs

CA Paz de Araujo, J Celinska, CR McWilliams… - Apl Materials, 2022 - pubs.aip.org
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with carbon, show
non-volatile current–voltage characteristics, which are both universal and repeatable. We …

Photoinduced charge-carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions

W Lee, D Chung, H Jeon, B Cho, KY Choi, SW Yoo… - Physical Review A, 2024 - APS
Ion trap systems built upon microfabricated chips have emerged as a promising platform for
quantum computing to achieve reproducible and scalable structures. However …

[PDF][PDF] Issues in current-voltage/capacitance-voltage traces-based MIS characterisation that improves understanding for a better design of n-channel MOSFETs on Si …

RK Chanana - IOSR-JEEE, 2019 - researchgate.net
An n-MOS device in accumulation and an n-channel MOSFET in inversion behave like a
Metal-Insulator-Metal device with a high concentration of electrons of the order of …

Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures

G Delie, I Shlyakhov, K Iakoubovskii, S Achra… - Solid-State …, 2021 - Elsevier
Excitonic and band-to-band transitions in monolayer WS 2 were observed using transient
photoconductivity in metal-insulator-silicon structures. Significant improvement in sensitivity …