H Qiao, C Wang, WS Choi, MH Park, Y Kim - Materials Science and …, 2021 - Elsevier
Device applications of ferroelectrics have not only utilized the switchable polarization but also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and …
The properties of ferroelectric materials, which were discovered almost a century ago, have led to a huge range of applications, such as digital information storage, pyroelectric energy …
Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor …
Negative capacitance in ferroelectric materials has been suggested as a solution to reduce the power dissipation of electronics beyond fundamental limits. The discovery of …
Negative differential capacitance in ferroelectrics, which can be stabilized using a dielectric, could be used to overcome the limitations of capacitive coupling in electronic devices …
The negative capacitance (NC) effect in ferroelectric thin films has attracted a great deal of attention from the material and semiconductor device communities because it could be a …
L Tu, X Wang, J Wang, X Meng… - Advanced Electronic …, 2018 - Wiley Online Library
With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …
Recently, the proposal to use voltage amplification from ferroelectric negative capacitance (NC) to reduce the power dissipation in nanoelectronic devices has attracted significant …