Ferroelectric negative capacitance

J Íñiguez, P Zubko, I Luk'yanchuk, A Cano - Nature Reviews Materials, 2019 - nature.com
The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …

[HTML][HTML] Ultra-thin ferroelectrics

H Qiao, C Wang, WS Choi, MH Park, Y Kim - Materials Science and …, 2021 - Elsevier
Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu… - Nature, 2022 - nature.com
With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …

Unveiling the double-well energy landscape in a ferroelectric layer

M Hoffmann, FPG Fengler, M Herzig, T Mittmann… - Nature, 2019 - nature.com
The properties of ferroelectric materials, which were discovered almost a century ago, have
led to a huge range of applications, such as digital information storage, pyroelectric energy …

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

T Mikolajick, S Slesazeck, MH Park, U Schroeder - Mrs Bulletin, 2018 - cambridge.org
Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating
ferroelectric layers and integrating them into complementary metal oxide semiconductor …

Progress and future prospects of negative capacitance electronics: A materials perspective

M Hoffmann, S Slesazeck, T Mikolajick - APL Materials, 2021 - pubs.aip.org
Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

Negative differential capacitance in ultrathin ferroelectric hafnia

S Jo, H Lee, DH Choe, JH Kim, YS Lee, O Kwon… - Nature …, 2023 - nature.com
Negative differential capacitance in ferroelectrics, which can be stabilized using a dielectric,
could be used to overcome the limitations of capacitive coupling in electronic devices …

Modeling of negative capacitance in ferroelectric thin films

HW Park, J Roh, YB Lee, CS Hwang - Advanced Materials, 2019 - Wiley Online Library
The negative capacitance (NC) effect in ferroelectric thin films has attracted a great deal of
attention from the material and semiconductor device communities because it could be a …

Ferroelectric negative capacitance field effect transistor

L Tu, X Wang, J Wang, X Meng… - Advanced Electronic …, 2018 - Wiley Online Library
With the progress in silicon circuit miniaturization, lowering power consumption becomes the
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …

On the stabilization of ferroelectric negative capacitance in nanoscale devices

M Hoffmann, M Pešić, S Slesazeck, U Schroeder… - Nanoscale, 2018 - pubs.rsc.org
Recently, the proposal to use voltage amplification from ferroelectric negative capacitance
(NC) to reduce the power dissipation in nanoelectronic devices has attracted significant …