[HTML][HTML] Recent progress in heterogeneous III-V-on-silicon photonic integration

D Liang, JE Bowers - Light: Advanced Manufacturing, 2021 - light-am.com
Silicon (Si) photonics is a disruptive technology on the fast track to revolutionise integrated
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …

Alternative plasmonic materials: beyond gold and silver

GV Naik, VM Shalaev, A Boltasseva - Advanced materials, 2013 - Wiley Online Library
Materials research plays a vital role in transforming breakthrough scientific ideas into next‐
generation technology. Similar to the way silicon revolutionized the microelectronics …

Silicon photonics

B Jalali, S Fathpour - Journal of lightwave technology, 2006 - ieeexplore.ieee.org
After dominating the electronics industry for decades, silicon is on the verge of becoming the
material of choice for the photonics industry: the traditional stronghold of III-V …

Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

L Tang, SE Kocabas, S Latif, AK Okyay… - Nature …, 2008 - nature.com
A critical challenge for the convergence of optics and electronics is that the micrometre scale
of optics is significantly larger than the nanometre scale of modern electronic devices. In the …

Surface preparation prior to deposition on germanium

G Wilk - US Patent 7,202,166, 2007 - Google Patents
Methods are provided for treating germanium Surfaces in preparation for Subsequent
deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to …

Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates

M Bauer - US Patent 7,208,354, 2007 - Google Patents
Methods are provided for producing SiGe-on-insulator structures and for forming strain-
relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are …

[图书][B] Integrated silicon optoelectronics

H Zimmermann, H Zimmermann - 2010 - Springer
Since the first edition of this book, a lot of interesting integrated optoelectronic devices were
investigated and introduced in numerous publications. Therefore, Springer and me decided …

Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization

TY Liow, KW Ang, Q Fang, JF Song… - IEEE Journal of …, 2009 - ieeexplore.ieee.org
Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The
carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V¿ L …

Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

L Colace, G Masini, G Assanto, HC Luan… - Applied Physics …, 2000 - pubs.aip.org
We have fabricated Ge/Si heterojunction photodetectors with high responsivities of 550
mA/W at 1.32 μm and 250 mA/W at 1.55 μm and time responses shorter than 850 ps. High …

Reduced pressure–chemical vapor deposition of Ge thick layers on Si (001) for 1.3–1.55-μm photodetection

JM Hartmann, A Abbadie, AM Papon… - Journal of Applied …, 2004 - pubs.aip.org
With the increasing use of optical fibers in telecommunications, the demand for efficient
photodetectors operating in the low loss windows 1.3–1.6 m of silica fibers is growing …