Materials research plays a vital role in transforming breakthrough scientific ideas into next‐ generation technology. Similar to the way silicon revolutionized the microelectronics …
B Jalali, S Fathpour - Journal of lightwave technology, 2006 - ieeexplore.ieee.org
After dominating the electronics industry for decades, silicon is on the verge of becoming the material of choice for the photonics industry: the traditional stronghold of III-V …
A critical challenge for the convergence of optics and electronics is that the micrometre scale of optics is significantly larger than the nanometre scale of modern electronic devices. In the …
G Wilk - US Patent 7,202,166, 2007 - Google Patents
Methods are provided for treating germanium Surfaces in preparation for Subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to …
M Bauer - US Patent 7,208,354, 2007 - Google Patents
Methods are provided for producing SiGe-on-insulator structures and for forming strain- relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are …
Since the first edition of this book, a lot of interesting integrated optoelectronic devices were investigated and introduced in numerous publications. Therefore, Springer and me decided …
TY Liow, KW Ang, Q Fang, JF Song… - IEEE Journal of …, 2009 - ieeexplore.ieee.org
Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V¿ L …
We have fabricated Ge/Si heterojunction photodetectors with high responsivities of 550 mA/W at 1.32 μm and 250 mA/W at 1.55 μm and time responses shorter than 850 ps. High …
JM Hartmann, A Abbadie, AM Papon… - Journal of Applied …, 2004 - pubs.aip.org
With the increasing use of optical fibers in telecommunications, the demand for efficient photodetectors operating in the low loss windows 1.3–1.6 m of silica fibers is growing …