Photothermal synergistic high-sensitivity self-driven vertical asymmetric Te/Bi2Te3/In2O3 heterojunction near-infrared imaging photodetector

C Zhao, D Wang, W He, D Liu, J Cao, X Zhang… - Chemical Engineering …, 2024 - Elsevier
Infrared detection and imaging devices have great potential in the fields of defense and
security, medical monitoring, and food safety. As a novel method, photothermal assistants …

Two-dimensional material assisted-growth strategy: new insights and opportunities

Y Feng, M Khalid, H Xiao, PA Hu - Nanotechnology, 2024 - iopscience.iop.org
The exploration and synthesis of novel materials are integral to scientific and technological
progress. Since the prediction and synthesis of two-dimensional (2D) materials, it is …

[HTML][HTML] Two-dimensional Bi2O2Se nanosheets for sensitive and fast-response high-temperature photodetectors

X Zou, R Wang, Y Sun, C Wang - Journal of Materiomics, 2023 - Elsevier
Abstract Two-dimensional Bi 2 O 2 Se with unique crystal structure and ultrahigh carrier
mobility has been catching widespread attention and demonstrated great potential in …

Two-dimensional materials for future information technology: status and prospects

H Qiu, Z Yu, T Zhao, Q Zhang, M Xu, P Li, T Li… - Science China …, 2024 - Springer
Over the past 70 years, the semiconductor industry has undergone transformative changes,
largely driven by the miniaturization of devices and the integration of innovative structures …

Mixed-Dimensional PtSe2/Bi2Te3/Pyramid Si Heterojunction with a Light-Trapping Structure for Highly Sensitive Ultrabroadband Photodetection

X Li, K Liu, R Zhuo, L Zeng, P Lin, L Li, Z Shi… - ACS …, 2024 - ACS Publications
Broadband photodetectors have garnered widespread attention in the realm of modern
optoelectronic devices and systems due to their pivotal role in various applications …

Topological Insulator Bi2Se3 Heterojunction with a Low Dark Current for Midwave Infrared Photodetection

T Zhao, Y Chen, T Xu, F Zhong, Y Yu, H Ma… - ACS …, 2024 - ACS Publications
Broadband photodetection including midwave infrared (MWIR) is crucial in space science
and technology. Topological insulators Bi2Se3 have exhibited excellent performance in …

Visible-Light-Stimulated Optoelectronic Neuromorphic Transistor Based on Indium–Gallium–Zinc Oxide via Bi2Te3 Light Absorption Layer

HT Kim, DH Choi, MS Kim, S Lee… - ACS Applied Materials …, 2024 - ACS Publications
To emulate a visual perception system, a bismuth telluride (Bi2Te3)/indium–gallium–zinc
oxide (IGZO) heterostructure is introduced for optoelectronic neuromorphic transistors …

The Construction and Mechanism Study of High‐Speed Carrier Transport Channel in Gallium Arsenide Homojunction Toward High‐Performance …

H Chen, L Liu, Y Gu, Z Cai, F Xu, W Liang, X Hou… - Small, 2024 - Wiley Online Library
The energy band structure and surface/interface properties are prerequisite for not only
preserving the intrinsic material quality but also manipulating carrier transport behavior for …

Large-scale free-standing Bi2Te3/Si heterostructures developed by a modified solvothermal method for a self-powered and efficient imaging photodetector

S Yang, S Jiao, Y Nie, Y Zhao, X Jia, S Gao… - Journal of Alloys and …, 2025 - Elsevier
Topological insulator bismuth telluride (Bi 2 Te 3), an exotic state of quantum matter, has
broad application prospects in next-generation optoelectronic devices. However …

2D Growth of BiSCl as Anisotropic Photodetector with Ultrahigh Responsivity and Detectivity

Z Lin, X Yuan, R Wang, Y Li, L Shi… - Advanced Optical …, 2024 - Wiley Online Library
BiSCl, which shares the anisotropic chain‐like lattice configuration with the BiVXVIYVII (X
S, Se; Y Cl, Br, I) family displays high photoelectric conversion efficiency in the UV–vis …