Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric
layer and methods for forming the same are disclosed. In an example, a 3D memory device …

An apparatus comprises a stack comprising an alternating sequence of dielectric structures
and conductive structures, a first channel material extending vertically through the stack, and …

The semiconductor device includes a substrate, a stack structure including gate patterns and
interlayer insulating films that are alternately stacked on the substrate, an insulating pillar …

Embodiments herein describe FETs with channels that form wrap-around contacts (a female
portion of a female/male connection) with metal contacts (a male portion of the female/male …

RKTYLMNFRDHKIL-UHFFFAOYSA-N copper; 5, 10, 15, 20-tetraphenylporphyrin-22, 24-
diide Chemical compound [Cu+2]. C1= CC (C (= C2C= CC ([N-] 2)= C (C= 2C= CC= CC= 2) …

An apparatus comprises a stack comprising an alternating sequence of dielectric structures
and conductive structures, a first channel material extending vertically through the stack, and …

A microelectronic device includes a stack structure comprising a vertically alternating
sequence of insulative structures and conductive structures arranged in tiers. At least one …

Electronic devices comprising a doped dielectric material adjacent to a source contact, tiers
of alternating conductive materials and dielectric materials adjacent to the doped dielectric …

A method used in forming a memory array comprising strings of memory cells comprises
forming a stack comprising vertically-alternating first tiers and second tiers. A channel …

According to one embodiment, a semiconductor memory device includes: first to fifth
interconnects; a semiconductor layer having one end located between the fourth …