Co-packaged optics (CPO): status, challenges, and solutions
Due to the rise of 5G, IoT, AI, and high-performance computing applications, datacenter
traffic has grown at a compound annual growth rate of nearly 30%. Furthermore, nearly three …
traffic has grown at a compound annual growth rate of nearly 30%. Furthermore, nearly three …
A 30-GHz CMOS SOI outphasing power amplifier with current mode combining for high backoff efficiency and constant envelope operation
High peak and average efficiency is an important feature of power amplifiers (PAs) for 5G
millimeter-wave communication. This article reviews the challenges of conventional …
millimeter-wave communication. This article reviews the challenges of conventional …
Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits
A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …
wave 5G systems, along with a comparison of the potential of different semiconductor …
A flexible phased array system with low areal mass density
Phased arrays are multiple antenna systems capable of forming and steering beams
electronically using constructive and destructive interference between sources. They are …
electronically using constructive and destructive interference between sources. They are …
Multi-port active load pulling for mm-wave 5G power amplifiers: Bandwidth, back-off efficiency, and VSWR tolerance
CR Chappidi, T Sharma… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The opening of spectral bands in the millimeter-wave (mm-Wave) spectrum from 26 GHz
and extending up to the E-band poses new challenges to the power amplifier (PA) design for …
and extending up to the E-band poses new challenges to the power amplifier (PA) design for …
A DC-to-108-GHz CMOS SOI distributed power amplifier and modulator driver leveraging multi-drive complementary stacked cells
O El-Aassar, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2019 - ieeexplore.ieee.org
This article proposes a complementary distributed power amplifier (DPA) using stacked gain
cells with multiple input driving signals. The stack multi-drive compensates for the increasing …
cells with multiple input driving signals. The stack multi-drive compensates for the increasing …
A Ka-Band Transformer-Based Doherty Power Amplifier for Multi-Gb/s Application in 90-nm CMOS
YC Chen, YH Lin, JL Lin, H Wang - IEEE Microwave and …, 2018 - ieeexplore.ieee.org
A Ka-band transformer (TF)-based Doherty power amplifier (DPA) is designed and
fabricated in 90-nm CMOS process. Symmetrical Doherty structure is used to improve the 6 …
fabricated in 90-nm CMOS process. Symmetrical Doherty structure is used to improve the 6 …
High-power generation for mm-wave 5G power amplifiers in deep submicrometer planar and FinFET bulk CMOS
A review is presented of the key techniques for high-power, high-efficiency millimeter-Wave
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
A cascaded multi-drive stacked-SOI distributed power amplifier with 23.5 dBm peak output power and over 4.5-THz GBW
O El-Aassar, GM Rebeiz - IEEE Transactions on Microwave …, 2020 - ieeexplore.ieee.org
This article presents a cascaded distributed power amplifier (DPA) topology with greater
than 4.5-THz gain-bandwidth (GBW) product. The DPA uses stacking with multi-drive inter …
than 4.5-THz gain-bandwidth (GBW) product. The DPA uses stacking with multi-drive inter …
15 GHz Doherty power amplifier with RF predistortion linearizer in CMOS SOI
N Rostomyan, JA Jayamon… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
A two-stage, high-power symmetric Doherty power amplifier (PA) at 15 GHz is presented.
The PA is implemented in 45 nm CMOS silicon on insulator and achieves more than 23 dB …
The PA is implemented in 45 nm CMOS silicon on insulator and achieves more than 23 dB …