Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Q Cai, H You, H Guo, J Wang, B Liu, Z Xie… - Light: Science & …, 2021 - nature.com
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …
environmental, industrial, military, and biological fields. As a representative III-nitride …
Short-wavelength solar-blind detectors-status, prospects, and markets
M Razeghi - Proceedings of the IEEE, 2002 - ieeexplore.ieee.org
Recent advances in the research work on III-nitride semiconductors and Al/sub x/Ga/sub 1-
x/N materials in particular has renewed the interest and led to significant progress in the …
x/N materials in particular has renewed the interest and led to significant progress in the …
[图书][B] Handbook of nitride semiconductors and devices, GaN-based optical and electronic devices
H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Polarization-graded AlGaN solar-blind pin detector with 92% zero-bias external quantum efficiency
A Kalra, S Rathkanthiwar… - IEEE Photonics …, 2019 - ieeexplore.ieee.org
We report on record high zero-bias external quantum efficiency (EQE) of 92% for back-
illuminated Al0. 40Ga0. 60N pin ultra-violet (UV) photodetectors on sapphire. The zerobias …
illuminated Al0. 40Ga0. 60N pin ultra-violet (UV) photodetectors on sapphire. The zerobias …
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
We report on the design, fabrication, and characterization of solar-blind Schottky
photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ …
photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ …
High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures
Design, fabrication, and characterization of high-performance Al/sub x/Ga/sub 1-x/N-based
photodetectors for solar-blind applications are reported. Al/sub x/Ga/sub 1-x/N …
photodetectors for solar-blind applications are reported. Al/sub x/Ga/sub 1-x/N …
Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode
L Guo, K Jiang, X Sun, Z Zhang, J Ben, Y Jia… - Photonics …, 2021 - opg.optica.org
AlGaN solar-blind ultraviolet (SBUV) detectors have potential application in fire monitoring,
corona discharge monitoring, or biological imaging. With the promotion of application …
corona discharge monitoring, or biological imaging. With the promotion of application …
Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition
AlN/GaN single and multilayer structures with various AlN and GaN layer thicknesses were
grown by metalorganic chemical vapor deposition. Step flow growth of AlN was achieved …
grown by metalorganic chemical vapor deposition. Step flow growth of AlN was achieved …
Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes
We report on crystalline quality-to-device performance correlation for self-powered Al 0.40
Ga 0.60 N, p–i–n ultraviolet (UV) photodetectors on c-plane sapphire. The active p–i–n …
Ga 0.60 N, p–i–n ultraviolet (UV) photodetectors on c-plane sapphire. The active p–i–n …
Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode
A Hirano, C Pernot, M Iwaya… - … status solidi (a), 2001 - Wiley Online Library
We have fabricated n‐Al0. 44Ga0. 56N/i‐Al0. 44Ga0. 56N/p‐GaN heterojunction
photodiodes with a cut‐off wavelength of 275 nm. The multilayer device structure was grown …
photodiodes with a cut‐off wavelength of 275 nm. The multilayer device structure was grown …