The orbital Hall effect in light materials has attracted considerable attention for developing
orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the …

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast
operation and high endurance but faces challenges such as low switching current, reliable …

Electrically generated spin–orbit torque (SOT) has emerged as a powerful pathway to
control magnetization for spintronic applications including memory, logic, and …

Spin currents of perpendicularly polarized spins (z spins) have received blooming interest
for the potential in energy‐efficient spin–orbit torque switching of perpendicular …

Spin-orbit torques (SOTs) provide an energy-efficient approach for the electrical
manipulation of magnetization, pivotal for next-generation information storage and …

Antiferromagnets are competitive candidates for the next generation of spintronic devices
owing to their superiority in small‐scale and low‐power‐consumption devices. The electrical …

Realizing spin-orbit torques (SOTs) driven magnetization switching offers promising
opportunities for the advancement of next-generation spintronics. However, the relatively …

In traditional von Neumann computing architecture, the efficiency of the system is often
hindered by the data transmission bottleneck between the processor and memory. A …

As an emerging non-volatile memory technology, magnetic random access memory (MRAM)
has key features and advantages including non-volatility, high speed, endurance, low power …

Spin torque is typically classified based on how the spin current is generated and injected
into a magnet for manipulation. Spin-orbit torque arises from the spin-orbit interaction in a …