Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
Ferroelectric hafnium zirconium oxide compatible with back-end-of-line process
To scale the ferroelectric random access memory (FeRAM) technology toward 28 nm or
beyond, it is critical to develop stacked capacitor (with sufficient surface area) to allow good …
beyond, it is critical to develop stacked capacitor (with sufficient surface area) to allow good …
Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K
Ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) thin film has obtained considerable attention for
emerging non-volatile memory (eNVM) and synaptic device applications. To our best …
emerging non-volatile memory (eNVM) and synaptic device applications. To our best …
Improving Edge Dead Domain and Endurance in Scaled HfZrOx FeRAM
YD Lin, PC Yeh, YT Tang, JW Su… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal
(MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm …
(MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm …
HfO₂-based ferroelectric optoelectronic memcapacitors
We report one-capacitor (1C) architecture HfO2-based ferroelectric optoelectronic
memcapacitors (FOMs), empowering with photoelectric perception and memory functions …
memcapacitors (FOMs), empowering with photoelectric perception and memory functions …
Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing
B Chen, C Wang, X Zhan, S Wu, L Tai, J Mei… - …, 2023 - iopscience.iop.org
To break the von Neumann bottleneck, emerging non-volatile memories have gained
extensive attention in hardware implementing neuromorphic computing. The device scaling …
extensive attention in hardware implementing neuromorphic computing. The device scaling …
A technology path for scaling embedded FeRAM to 28 nm and beyond with 2T1C structure
Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric random access memory (FeRAM) has been
demonstrated in 130 nm node with 1T1C structure. To scale FeRAM to 28 nm or beyond, a …
demonstrated in 130 nm node with 1T1C structure. To scale FeRAM to 28 nm or beyond, a …
Novel Asymmetric Operation Scheme for HfO2-based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts
In this work, with the consideration of pulsing sequence of FeRAM operation, the impacts of
hafnia-based ferroelectric (FE) dynamics on polarization switching and memory window …
hafnia-based ferroelectric (FE) dynamics on polarization switching and memory window …
Damage-Induced Ferroelectricity in HfOx-Based Thin Film
In the last decade, a surge in research on hafnium oxide (HfO x)-based ferroelectricity has
become a significant part of the semiconductor research trend. In this work, we present a …
become a significant part of the semiconductor research trend. In this work, we present a …
Examination of Ferroelectric Domain Dynamics in HZO under Endurance Cycling Stress
We investigate domain wall (DW) movement in hafnium zirconium oxide (HZO) under
various temperature () and cycling stresses. It is demonstrated that cycling stress distinctly …
various temperature () and cycling stresses. It is demonstrated that cycling stress distinctly …