Different topologies of inverter: a literature survey

K Chenchireddy, V Jegathesan… - Innovations in Electrical …, 2020 - Springer
DC to AC control change is a key job in the cutting edge set up of age, transmission,
appropriation, and use. DC to AC control converters assume key job in variable recurrence …

In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement

S Pu, E Ugur, F Yang, B Akin - IEEE Transactions on Industrial …, 2019 - ieeexplore.ieee.org
This paper presents an silicon carbide (SiC) MOSFET health condition monitoring method
based on the switching transient measurements. Specifically, the device's turn-on time is …

Analysis and Design of High-Efficiency Modular Multilevel Resonant DC-DC Converter

Y Li, M Wei, X Lyu, Z Ni, D Cao - IEEE Open Journal of Power …, 2022 - ieeexplore.ieee.org
This paper demonstrates a high-efficiency modular multilevel resonant DC-DC converter
(MMRC) with zero-voltage switching (ZVS) capability. In order to minimize the conduction …

Miller plateau as an indicator of SiC MOSFET gate oxide degradation

Z Ni, Y Li, X Lyu, OP Yadav… - 2018 IEEE Applied Power …, 2018 - ieeexplore.ieee.org
This paper presents a new indicator of SiC MOSFET gate oxide degradation based on Miller
plateau. The physical mechanism of Miller plateau shift with gate oxide electric field is first …

Octovalve thermal management control for electric vehicle

A Wray, K Ebrahimi - Energies, 2022 - mdpi.com
In the pursuit of more efficient vehicles on the world's roads, the vehicle thermal
management system has become a limiting factor when it comes to EV range and battery …

SiC MOSFET aging detection based on miller plateau voltage sensing

S Pu, F Yang, E Ugur, C Xu… - 2019 IEEE Transportation …, 2019 - ieeexplore.ieee.org
Harsh operating environment and high temperature swings introduce die and packaging
related degradations in SiC MOSFETs causing potential system failures. This paper …

Study of the thermomechanical strain induced by current pulses in SiC-based power MOSFET

L Anoldo, C Triolo, S Panarello… - IEEE Electron …, 2021 - ieeexplore.ieee.org
Power SiC MOSFETs are going to substitute Si devices by to their significantly better
performances that make them much suitable in power switching applications such as …

Online Short-Term Aging Status Prediction of SiC MOSFETs for DC Solid-State Power Controller using Adaptive Variable Time-Steps Metabolic Gray Model

B Yu, L Wang - IEEE Transactions on Power Electronics, 2024 - ieeexplore.ieee.org
SiC MOSFETs are the key ideal device for the DC Solid-State Power Controller (DC-SSPC).
The reliability of DC-SSPCs can be improved by online predicting of SiC MOSFETs aging …

Intelligent Traction Inverter in Next Generation Electric Vehicles: The Health Monitoring of Silicon-Carbide Power Modules

C Pino, A Sitta, G Castagnolo… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
In automotive and industrial domains, the “health monitoring” or “condition monitoring” of
electronic devices is gradually playing a key role in manufacturing processes and innovation …

[PDF][PDF] 一种低母线电压尖峰的改进型Y 源逆变器及其可靠性分析

姚婷婷, 管乐诗, 石恩达, 王卫, 徐殿国 - 电工技术学报, 2021 - dgjsxb.ces-transaction.com
摘要该文提出一种改进型Y 源逆变器, 通过拓扑结构优化, 有效地改善了输入电流特性,
同时减小母线电压尖峰. 以采用SiC MOSFET 为例, 详尽分析该改进型Y 源逆变器的可靠性分析 …