S Pu, E Ugur, F Yang, B Akin - IEEE Transactions on Industrial …, 2019 - ieeexplore.ieee.org
This paper presents an silicon carbide (SiC) MOSFET health condition monitoring method based on the switching transient measurements. Specifically, the device's turn-on time is …
This paper demonstrates a high-efficiency modular multilevel resonant DC-DC converter (MMRC) with zero-voltage switching (ZVS) capability. In order to minimize the conduction …
Z Ni, Y Li, X Lyu, OP Yadav… - 2018 IEEE Applied Power …, 2018 - ieeexplore.ieee.org
This paper presents a new indicator of SiC MOSFET gate oxide degradation based on Miller plateau. The physical mechanism of Miller plateau shift with gate oxide electric field is first …
In the pursuit of more efficient vehicles on the world's roads, the vehicle thermal management system has become a limiting factor when it comes to EV range and battery …
S Pu, F Yang, E Ugur, C Xu… - 2019 IEEE Transportation …, 2019 - ieeexplore.ieee.org
Harsh operating environment and high temperature swings introduce die and packaging related degradations in SiC MOSFETs causing potential system failures. This paper …
L Anoldo, C Triolo, S Panarello… - IEEE Electron …, 2021 - ieeexplore.ieee.org
Power SiC MOSFETs are going to substitute Si devices by to their significantly better performances that make them much suitable in power switching applications such as …
B Yu, L Wang - IEEE Transactions on Power Electronics, 2024 - ieeexplore.ieee.org
SiC MOSFETs are the key ideal device for the DC Solid-State Power Controller (DC-SSPC). The reliability of DC-SSPCs can be improved by online predicting of SiC MOSFETs aging …
C Pino, A Sitta, G Castagnolo… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
In automotive and industrial domains, the “health monitoring” or “condition monitoring” of electronic devices is gradually playing a key role in manufacturing processes and innovation …