Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

The GaAsBiN denoted highly mismatched alloy is among the new material that has drawn
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …

In this paper, we present a systematic study of the optical properties evolution of GaN films
during the complete growth process on SiN-treated sapphire substrates by atmospheric …

In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …

In the current study, we investigated the partial decomposition of GaN layers grown on SiN-
treated sapphire substrate in an atmospheric pressure metal organic vapor phase epitaxy …

We have investigated the kinetic growth of low temperature GaN nucleation layers (LT-GaN)
grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were …

The low solid solubility of Bi in III-V semiconductors complicates achieving high Bi
incorporation in those films. Crystalline orientation is often overlooked as a parameter that …

The influence of the surface step termination on the metal-organic vapor phase epitaxy of
GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …

InAsBi/InAs heterostructures were elaborated on semi-insulating GaAs substrate by
atmospheric pressure metalorganic vapor phase epitaxy. Spectral reflectance in the range of …

We suggest a successful growth method for InAsBi layer epitaxy on (0 0 1) GaAs substrate.
An alternated trimethylbismuth flows was used during growth. For real time monitoring of the …