The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at …

Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact …

A comprehensive review of the features of silicon carbide (SiC) and various methods of
deposition of gate oxides are presented in this report. The SiC material, which is mostly …

This paper proposes a criterion to select the best family of commercial SiC power metal–
oxide–semiconductor field-effect transistors (MOSFETs) that provides the highest quality and …

The state-of-the-art technology for gate oxides on SiC involves the introduction of nitrogen to
reduce the density of interface defects. However, SiC metal–oxide–semiconductor (MOS) …

Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the
strong accumulation and depletion regions were characterized by an integrated-charge …

Deep level defects in wide bandgap semiconductors, whose response times are in the
range of power converter switching times, can have a significant effect on converter …

In this work, InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
(MIS-HEMTs) based on the AlN/GaN superlattice channel have been demonstrated. The …

This research has shown that the oxide thickness for silicon carbide (SiC) based wide
materials can be predicted using regression techniques in wet/dry nitrided or wet/dry non …

Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the
strong accumulation and depletion regions were characterized by an integrated-charge …