The multi-level-cell (MLC) NAND flash channel exhibits nonstationary behavior over
increasing program and erase (PE) cycles and data retention time. In this paper, an …

The practical NAND flash memory suffers from various non-stationary noises that are difficult
to be predicted. For example, the data retention noise induced channel offset is unknown …

The NAND flash memory channel is corrupted by different types of noises, such as the data
retention noise and the wear-out noise, which lead to unknown channel offset and make the …

Current generation Flash devices experience significant read-channel degradation from
damage to the oxide layer during program and erase operations. Information about the read …

Non-volatile memories (NVMs) have emerged as the primary replacement of hard-disk
drives for a variety of storage applications, including personal electronics, mobile computing …

With the fast development of non-volatile storage technology, NAND flash memory faces
more and more challenges such as data reliability and lifetime. To overcome the issue of the …

The read channel of a Flash memory cell degrades after repetitive program and erase (P/E)
operations. This degradation is often modeled as a function of the number of P/E cycles. In …

This paper uses a mutual-information maximization paradigm to optimize the voltage levels
written to cells in a Flash memory. To enable low-latency, each page of Flash memory stores …

The underlying models of sources of noise in flash memory are exploited to compute an
accurate distribution of the threshold voltage of a cell after cancelling cell to cell interference …

In this paper, we develop a framework for evaluating the symmetric capacity of multilevel-cell
(MLC) NAND flash devices while making very few assumptions regarding the underlying …