A review on GaN-based two-terminal devices grown on Si substrates
Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs),
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si (1 1 1)
Y Cordier, S Chenot, O Tottereau, M Zielinski… - Journal of crystal …, 2008 - Elsevier
The elaboration of Gallium nitride (GaN)-based high electron mobility transistors (HEMTs)
structures is comparatively investigated on cubic SiC/Si (111) templates and on silicon …
structures is comparatively investigated on cubic SiC/Si (111) templates and on silicon …
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si (111)
This work is dedicated to the study of the growth by ammonia source molecular beam
epitaxy of Al x Ga 1− x N/GaN high electron mobility transistors on (111) oriented silicon …
epitaxy of Al x Ga 1− x N/GaN high electron mobility transistors on (111) oriented silicon …
Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates
Z Li, P Shao, Y Wu, G Shi, T Tao, Z Xie… - Japanese Journal of …, 2021 - iopscience.iop.org
Several series of high Al composition AlGaN epilayers were grown on AlN/sapphire
templates by plasma assisted molecular beam epitaxy. Three growth regions, Ga droplets …
templates by plasma assisted molecular beam epitaxy. Three growth regions, Ga droplets …
Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy
R Aidam, E Diwo, N Rollbuehler, L Kirste… - Journal of Applied …, 2012 - pubs.aip.org
This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN-
based high electron mobility transistor structures grown on 4 in. Si (111) substrates. In situ …
based high electron mobility transistor structures grown on 4 in. Si (111) substrates. In situ …
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
In this work we study both the structural and electrical qualities of AlGaN/GaN high electron
mobility transistor heterostructures grown on silicon (111) by molecular beam epitaxy …
mobility transistor heterostructures grown on silicon (111) by molecular beam epitaxy …
Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection
This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility
transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices …
transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices …
Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films
In this work, we study the influence of 3C–SiC/Si (111) template parameters (thickness,
roughness and substrate miscut) on the GaN crystal quality and its strain state. For this …
roughness and substrate miscut) on the GaN crystal quality and its strain state. For this …
A detailed study of AlN and GaN grown on silicon‐on‐porous silicon substrate
G Gommé, G Gautier, M Portail… - … status solidi (a), 2017 - Wiley Online Library
In this study, we investigate the growth of AlN and GaN epilayers on silicon‐on‐porous
silicon (SOP) as a compliant substrate. The porous silicon layers is obtained by …
silicon (SOP) as a compliant substrate. The porous silicon layers is obtained by …
Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
This work is dedicated to the growth of GaN layers by molecular beam epitaxy. Plasma
assisted and ammonia growth techniques are compared. The influence of the nitrogen …
assisted and ammonia growth techniques are compared. The influence of the nitrogen …