Semiconductor spin qubits

G Burkard, TD Ladd, A Pan, JM Nichol, JR Petta - Reviews of Modern Physics, 2023 - APS
The spin degree of freedom of an electron or a nucleus is one of the most basic properties of
nature and functions as an excellent qubit, as it provides a natural two-level system that is …

Electrically controlling single-spin qubits in a continuous microwave field

A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra… - Science …, 2015 - science.org
Large-scale quantum computers must be built upon quantum bits that are both highly
coherent and locally controllable. We demonstrate the quantum control of the electron and …

Coherent feedback control of a single qubit in diamond

M Hirose, P Cappellaro - Nature, 2016 - nature.com
Engineering desired operations on qubits subjected to the deleterious effects of their
environment is a critical task in quantum information processing, quantum simulation and …

Electrically Induced Crystal Field Distortion in a Ferroelectric Perovskite Revealed by Electron Paramagnetic Resonance

YC Liu, JX Chen, PX Fu, YQ Liao… - Journal of the …, 2024 - ACS Publications
The magnetoelectric material has attracted multidisciplinary interest in the past decade for its
potential to accommodate various functions. Especially, the external electric field can drive …

Spin-electric coupling with anisotropy-induced vanishment and enhancement in molecular ferroelectrics

YH Fang, Z Liu, S Zhou, PX Fu, YX Wang… - Journal of the …, 2022 - ACS Publications
Manipulating quantum properties by electric fields using spin-electric coupling (SEC) effects
promises spatial addressability. While several studies about inorganic materials showing the …

Characterizing temperature and strain variations with qubit ensembles for their robust coherence protection

G Wang, AR Barr, H Tang, M Chen, C Li, H Xu… - Physical Review Letters, 2023 - APS
Solid-state spin defects, especially nuclear spins with potentially achievable long coherence
times, are compelling candidates for quantum memories and sensors. However, their current …

Electrometry by optical charge conversion of deep defects in 4H-SiC

G Wolfowicz, SJ Whiteley… - Proceedings of the …, 2018 - National Acad Sciences
Optically active point defects in various host materials, such as diamond and silicon carbide
(SiC), have shown significant promise as local sensors of magnetic fields, electric fields …

Probabilistic interpolation of quantum rotation angles

B Koczor, JJL Morton, SC Benjamin - Physical Review Letters, 2024 - APS
Quantum computing requires a universal set of gate operations; regarding gates as
rotations, any rotation angle must be possible. However a real device may only be capable …

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain

J Mansir, P Conti, Z Zeng, JJ Pla, P Bertet, MW Swift… - Physical Review Letters, 2018 - APS
We experimentally study the coupling of group V donor spins in silicon to mechanical strain,
and measure strain-induced frequency shifts that are linear in strain, in contrast to the …

Measurement of transverse hyperfine interaction by forbidden transitions

M Chen, M Hirose, P Cappellaro - Physical Review B, 2015 - APS
Precise characterization of a system's Hamiltonian is crucial to its high-fidelity control that
would enable many quantum technologies, ranging from quantum computation to …