The emergence and prospects of deep-ultraviolet light-emitting diode technologies

M Kneissl, TY Seong, J Han, H Amano - nature photonics, 2019 - nature.com
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …

AlGaN photonics: recent advances in materials and ultraviolet devices

D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire

Y Nagasawa, A Hirano - Applied Sciences, 2018 - mdpi.com
Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …

[HTML][HTML] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

H Miyake, CH Lin, K Tokoro, K Hiramatsu - Journal of Crystal Growth, 2016 - Elsevier
The annealing of sputtered AlN films with different thicknesses grown on sapphire in
nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were …

Ultrawide-bandgap semiconductor AlN crystals: growth and applications

R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces

T Feng, H Zhou, Z Cheng, LS Larkin… - ACS applied materials …, 2023 - ACS Publications
The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection

Z Zhang, M Kushimoto, A Yoshikawa… - Applied Physics …, 2022 - iopscience.iop.org
We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …

Improvement mechanism of sputtered AlN films by high-temperature annealing

S Xiao, R Suzuki, H Miyake, S Harada… - Journal of Crystal Growth, 2018 - Elsevier
The improvement mechanism of sputtered AlN films by high temperature annealing in
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …

Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy

T Kinoshita, K Hironaka, T Obata… - Applied Physics …, 2012 - iopscience.iop.org
AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were fabricated on AlN
substrates. The AlN substrates were prepared by growing thick hydride vapor phase epitaxy …

Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport

Y Kumagai, Y Kubota, T Nagashima… - Applied Physics …, 2012 - iopscience.iop.org
The structural and optical quality of a freestanding AlN substrate prepared from a thick AlN
layer grown by hydride vapor phase epitaxy (HVPE) on a bulk (0001) AlN substrate …