In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …

Multilevel operation is one of the most essential properties for synaptic devices to realize
hardware artificial neural networks. Compliance current (I cc) adjustment is a multilevel …

HfOx-Based resistive random-access memory (RRAM) devices are being widely considered
as both non-volatile memories for digital computation and synaptic memory for …

The in‐memory computing paradigm aims at overcoming the intrinsic inefficiencies of Von‐
Neumann computers by reducing the data‐transport per arithmetic operation. Crossbar …

This study implements a highly uniform 3D vertically stack resistive random‐access memory
(VRRAM) with a four‐layer contact hole structure. The fabrication process of a four‐layer …

We investigate the low-frequency noise (LFN) characteristics of resistive switching random
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …

Emerging nanoscale devices, including memristors, have been extensively studied to
implement biological synaptic functions such as learning and plasticity, which are the …

With the demand of flat panel display development, utilizing the non-volatile memory
devices based on indium-gallium-zinc-oxide (IGZO) film may be integrated with IGZO thin …

Ti/HfO x-based resistive random access memory (RRAM) has been extensively investigated
as an emerging nonvolatile memory (NVM) candidate due to its excellent memory …

As the demand for computing applications capable of processing large datasets increases,
there is a growing need for new in-memory computing technologies. Oxide-based resistive …