We review the history, development, design principles, experimental operating
characteristics, and specialized architectures of interband cascade lasers for the mid-wave …

Two new superlattices with high internal quantum efficiency at high injection, InAs/AlGaInSb
and InAs/GaInSb/InAs/AlAsSb, are presented and compared with state-of-the-art InAs/GaSb …

In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting
diodes (ICLEDs) were fabricated and studied at different temperatures. The ICLEDs were …

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared
applications, which would greatly expand if high-quality growth on silicon substrates could …

We report on ten-stage interband cascade light-emitting diodes (ICLEDs) using an
InAs/GaAsSb superlattices active region with a peak emission wavelength of 4.9 μm at the …

The high-quality growth of midwave infrared light emitters on silicon substrates will advance
their incorporation into photonic integrated circuits, and also introduce manufacturing …

We demonstrate a room-temperature all-epitaxial guided-mode resonance light-emitting
diode operating in the mid-wave infrared. The device comprises a dielectric waveguide with …

Quaternary Indium gallium arsenic antimony (InGaAsSb) compounds is indispensable as
the active layer of diode lasers emitting at 1.75–4.4 μm, which are used in optoelectronic …

We report on structural and optical studies of metamorphic InAs (Sb)/In (Ga, Al) As quantum
well (QW) heterostructures with different designs of the active region, grown by molecular …

GaSb crystal ingots were grown with vertical Bridgman method. The effects of temperature
gradient on the structure and properties of GaSb crystals were investigated. When the …