Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

A temperature dependence of impact ionization coefficients in 4H-SiC was studied in a wide
range of electric field toward the accurate designing of ultrahigh-voltage devices. The …

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power
diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to …

This chapter introduces the crystal structure, electronic band structure, and physical
properties of silicon carbide (SiC). Physical properties are critical parameters for accurate …

The temperature dependence of impact ionization coefficients of electrons and holes along
4H-SiC< 0001> was determined in a wide temperature range from 156 K to 561 K …

The combined effects of electrical stress and neutron irradiation of the last generation of
commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout …

Important physical models for 4H silicon carbide (4H-SiC) are constructed based on the
literature and experiments on the physical properties of 4H-SiC. The obtained physical …

We report new data on the temperature coefficient of the avalanche breakdown voltage (BV)
in 4H-SiC devices. We compare avalanche in different device types (MOSFETs/Schottky …

State of the art freewheeling diodes are connected antiparallel with a switch like IGBT or
MOSFET and for latter also with the internal body diode. The diodes have to be rugged …