Grain Boundaries in Cu(In, Ga)Se2: A Review of Composition–Electronic Property Relationships by Atom Probe Tomography and Correlative Microscopy
O Cojocaru‐Mirédin, M Raghuwanshi… - Advanced Functional …, 2021 - Wiley Online Library
Abstract Cu (In, Ga) Se2 thin‐film solar cells have attracted significant research interest in
recent decades due to their high efficiency in converting solar energy into electricity for …
recent decades due to their high efficiency in converting solar energy into electricity for …
The electronic structure of chalcopyrites—bands, point defects and grain boundaries
We summarize the progress made recently in understanding the electronic structure of
chalcopyrites. New insights into the dispersion of valence and conduction band allow …
chalcopyrites. New insights into the dispersion of valence and conduction band allow …
What limits the efficiency of chalcopyrite solar cells?
S Siebentritt - Solar Energy Materials and Solar Cells, 2011 - Elsevier
The limiting factors on the efficiency of current record devices are discussed. Optical and
collection losses are found to have a minor influence. They reduce the short circuit current …
collection losses are found to have a minor influence. They reduce the short circuit current …
Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments
N Nicoara, R Manaligod, P Jackson, D Hariskos… - Nature …, 2019 - nature.com
The properties and performance of polycrystalline materials depend critically on the
properties of their grain boundaries. Polycrystalline photovoltaic materials–eg hybrid halide …
properties of their grain boundaries. Polycrystalline photovoltaic materials–eg hybrid halide …
Engineering Grain Boundaries in Cu2ZnSnSe4 for Better Cell Performance: A First‐Principle Study
Through first‐principle density functional theory (DFT) calculations, the atomic structure and
electronic properties of intrinsic and passivated Σ3 (114) grain boundaries (GBs) in …
electronic properties of intrinsic and passivated Σ3 (114) grain boundaries (GBs) in …
Electrically Benign Behavior of Grain Boundaries in Polycrystalline Films
The classic grain-boundary (GB) model concludes that GBs in polycrystalline
semiconductors create deep levels that are extremely harmful to optoelectronic applications …
semiconductors create deep levels that are extremely harmful to optoelectronic applications …
Third-generation Cu-In-Ga-(S, Se)-based solar inverters
GF Novikov, MV Gapanovich - Physics-Uspekhi, 2017 - iopscience.iop.org
This paper reviews literature data on thin-film solar cells with absorber layers based on
quaternary copper compounds Cu-In-Ga-(S, Se)(CIGS). The paper considers methods of …
quaternary copper compounds Cu-In-Ga-(S, Se)(CIGS). The paper considers methods of …
Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cells
The paper reviews the current status of the research on grain boundaries in polycrystalline
Cu (In, Ga)(S, Se) 2 alloys used as absorber materials for thin-film solar cells. We discuss …
Cu (In, Ga)(S, Se) 2 alloys used as absorber materials for thin-film solar cells. We discuss …
Intrinsic Centers in Ternary Chalcopyrite Semiconductors
In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not
release electrons but instead form deep electron-traps known as “DX centers.” While in …
release electrons but instead form deep electron-traps known as “DX centers.” While in …
New insights on atomic-resolution frequency-modulation Kelvin-probe force-microscopy imaging of semiconductors
S Sadewasser, P Jelinek, CK Fang, O Custance… - Physical review …, 2009 - APS
We present dynamic force-microscopy experiments and first-principles simulations that
contribute to clarify the origin of atomic-scale contrast in Kelvin-probe force-microscopy …
contribute to clarify the origin of atomic-scale contrast in Kelvin-probe force-microscopy …