2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann… - Neuromorphic …, 2022 - iopscience.iop.org
Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …
science. In the von Neumann architecture, processing and memory units are implemented …
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …
memory and emerging applications on a silicon electronic platform after the discovery of the …
Unraveling the dynamics of charge trapping and de-trapping in ferroelectric FETs
In this work, a comprehensive study of charge trapping and de-trapping dynamics is
performed on n-channel ferroelectric field-effect transistors (nFeFETs) and pFeFETs. It is …
performed on n-channel ferroelectric field-effect transistors (nFeFETs) and pFeFETs. It is …
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs
Ferroelectric field-effect transistors (FeFETs) based on HfO 2 are promising for low-power
and high-speed non-volatile memory devices. However, most reported FeFETs show limited …
and high-speed non-volatile memory devices. However, most reported FeFETs show limited …
Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure
S Zhao, F Tian, H Xu, J Xiang, T Li… - … on Electron Devices, 2022 - ieeexplore.ieee.org
We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf 0.5 Zr 0.5
O 2/SiO 2/Si (MFIS) gate structure. We propose a method of experimentally extracting the …
O 2/SiO 2/Si (MFIS) gate structure. We propose a method of experimentally extracting the …
Modeling and design of FTJs as multi-level low energy memristors for neuromorphic computing
R Fontanini, M Segatto, M Massarotto… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here
presented in details. After a precise calibration again experiments, the model is exploited for …
presented in details. After a precise calibration again experiments, the model is exploited for …
Impact of random spatial fluctuation in non-uniform crystalline phases on the device variation of ferroelectric FET
In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE)
phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device …
phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device …
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
point of both the fundamentals and the applications. In this review article, the current …
Sensing single domains and individual defects in scaled ferroelectrics
Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and
neuromorphic computing; however, for advanced applications, single domain dynamics and …
neuromorphic computing; however, for advanced applications, single domain dynamics and …