Silicon-based Charge Trapping Memory Devices for Next-Generation Flexible Electronics Application

Polaron formation in the hydrogenated amorphous silicon nitride

C Wilhelmer, D Waldhör, L Cvitkovich, D Milardovich… - Physical Review B, 2024 - APS
Silicon nitride (Si 3 N 4) is commonly used as the charge storage layer of nonvolatile charge
trap flash (CTF) memory devices. Previous theoretical investigations have shown a large …
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