The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms

Y Shen, Z Dong, Y Sun, H Guo, F Wu, X Li… - Advanced …, 2022 - Wiley Online Library
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …

Hybrid system combining two-dimensional materials and ferroelectrics and its application in photodetection

Y Sun, G Niu, W Ren, X Meng, J Zhao, W Luo, ZG Ye… - ACS …, 2021 - ACS Publications
Photodetectors are one of the most important components for a future “Internet-of-Things”
information society. Compared to the mainstream semiconductor-based photodetectors …

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

Y Liu, P Stradins, SH Wei - Science advances, 2016 - science.org
Two-dimensional (2D) semiconductors have shown great potential for electronic and
optoelectronic applications. However, their development is limited by a large Schottky …

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

SS Chee, D Seo, H Kim, H Jang, S Lee… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides (TMDCs) have emerged as promising
candidates for post‐silicon nanoelectronics owing to their unique and outstanding …

Universal Fermi-level pinning in transition-metal dichalcogenides

K Sotthewes, R Van Bremen, E Dollekamp… - The Journal of …, 2019 - ACS Publications
Understanding the electron transport through transition-metal dichalcogenide (TMDC)-
based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-) …

Booming development of group IV–VI semiconductors: fresh blood of 2D family

X Zhou, Q Zhang, L Gan, H Li, J Xiong… - Advanced science, 2016 - Wiley Online Library
As an important component of 2D layered materials (2DLMs), the 2D group IV metal
chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant …

[HTML][HTML] Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

A Rai, HCP Movva, A Roy, D Taneja, S Chowdhury… - Crystals, 2018 - mdpi.com
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …

In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS2 Interfaces

NP Kondekar, MG Boebinger, EV Woods… - … applied materials & …, 2017 - ACS Publications
Nanoscale transition-metal dichalcogenide (TMDC) materials, such as MoS2, exhibit
promising behavior in next-generation electronics and energy-storage devices. TMDCs …

Radio Frequency Transistors and Circuits Based on CVD MoS2

A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin… - Nano …, 2015 - ACS Publications
We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited
(CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of …

First-principles study of van der Waals interactions and lattice mismatch at interfaces

M Farmanbar, G Brocks - Physical Review B, 2016 - APS
We explore the adsorption of MoS 2 on a range of metal substrates by means of first-
principles density functional theory calculations. Including van der Waals forces in the …