The transformer is one of the main common mode (CM) noise propagation paths in isolated
DC-DC converters. The impedances of the CM path of a transformer will transfer from …

The insulated gate bipolar transistor (IGBT) module is subjected to unbalanced electric-
thermal stress for a long time due to its own turn-on and turn-off, the fluctuation of processing …

With the development of power electronic converters (PECs), the thermal properties of high-
power insulated gate bipolar transistor (IGBT) module are of significant importance in the …

Split-output structure outperforms the common halfbridge structure for silicon carbide (SiC)
applications in terms of operation efficiency increasing, crosstalk voltage suppression, and …

摘要并联IGBT 是解决托卡马克(Tokamak) 装置中等离子体垂直位移快速控制电源容量逐渐增大
问题的有效途径. 而并联IGBT 之间的结温平衡是并联系统安全稳定运行的关键因素之一. 因此 …

The Si/SiC Cascode device has been widely accepted in various applications, however, its
reliability issue still remains a major concern and needs to be extensively investigated. In …

Due to the coefficients of thermal expansion (CTE) mismatch between various materials, the
bond wire of insulated gate bipolar transistor (IGBT) module is prone to heel-cracking or lift …

IGBT parallel connections are an effective way to increase the capacity of power electronic
converters. The junction temperature balance between IGBTs is one of the key factors in the …

This paper proposes a power terminal design method to obtain a suitable RMS current
capacity to fit high-capacity power semiconductor modules. The thermal model considering …

Fast and accurate calculation of junction temperature is attractive for reliability evaluation of
insulated gate bipolar transistor (IGBT) module. However, in most of existing methods, a …