Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …

Facet structures of GaN grown by epitaxial lateral overgrowth (ELO) via low-pressure
metalorganic vapor-phase epitaxy (LP-MOVPE) are controlled by growth conditions such as …

While the demand for deep ultraviolet (DUV) light sources is rapidly growing, the efficiency
of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their …

We report the selective-area growth (SAG) of Ga-polar thin GaN nanowires on patterned
GaN/sapphire (0001) substrates using metalorganic chemical vapor deposition (MOCVD) …

High quality ε-phase gallium oxide (Ga 2 O 3) thin films grown on Si (1 1 1) substrates by
metal–organic chemical vapor deposition (MOCVD) have been demonstrated. It is found that …

Selective-area growth (SAG) and epitaxial lateral overgrowth (ELO) techniques used in
group III nitride epitaxy are reviewed. Structurally controlled GaN in line patterns and dot …

Photocatalytic overall water splitting is an ideal green technology to produce the clean and
renewable hydrogen energy. Herein, high crystalline zigzag GaN nanowires (NWs) are …

A wide variety of nanostructure shapes have been observed for GaN under different growth
conditions. These shapes include but are not limited to hexagonal pyramid, prismatic …

Background: The upsurge in the field of radio frequency power electronics has led to the
involvement of wide bandgap semiconductor materials because of their potential …

The effects of different AlN buffer deposition temperatures on the GaN material properties
grown on sapphire substrate was investigated. At relatively higher AlN buffer growth …