A novel high-density dual threshold GNRFET SRAM design with improved stability

PK Patel, MM Malik, TK Gupta - Microprocessors and Microsystems, 2020 - Elsevier
We propose a novel single-ended static random access memory (SRAM) design with nine
graphene nanoribbon FETs (9-GNRFET) in this paper. Single-ended has an impact on …

A read-disturb-free stable low power and high-density GNRFET 6T SRAM with multi-VT technology

PK Patel, MM Malik, TK Gutpa - Circuit World, 2020 - emerald.com
Purpose The performance of the conventional 6T SRAM cell can be improved by using
GNRFET devices with multi-threshold technology. The proposed cell shows the strong …

[PDF][PDF] A wrap-gate CNT-MOSFET based SRAM bit-cell with asymmetrical ground gating and built-in read-assist schemes for limited-energy environments application

A Darabi, MR Salehi, E Abiri - 2021 - pdfs.semanticscholar.org
Today, designing low-power single-bit SRAM structures with the ability to operate regularly
at low supply voltages and with high immunity against standard radiation particles impact is …