2D materials-based 3D integration for neuromorphic hardware
Neuromorphic hardware enables energy-efficient computing, which is essential for a
sustainable system. Recently, significant progress has been reported in neuromorphic …
sustainable system. Recently, significant progress has been reported in neuromorphic …
Performance analysis on complementary FET (CFET) relative to standard CMOS with nanosheet FET
For the first time, by using 3-D TCAD, the advantage of using complementary FET (CFET),
which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to …
which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to …
Impact of process variation on nanosheet gate-all-around complementary FET (CFET)
X Yang, X Li, Z Liu, Y Sun, Y Liu, X Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, dc characteristic variations of nanosheet (NS) gate-all-around (GAA)
complementary FET (CFET) induced by process fluctuations are investigated for the first …
complementary FET (CFET) induced by process fluctuations are investigated for the first …
Layout optimization of complementary FET 6T-SRAM cell based on a universal methodology using sensitivity with respect to parasitic-and-values
Y Luo, L Cao, Q Zhang, Y Cao, Z Zhang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Complementary FET (CFET) is a promising booster for further area reductions in static
random-access memory (SRAM) cells. However, the performance degrading by a series of …
random-access memory (SRAM) cells. However, the performance degrading by a series of …
Complementary FET (CFET) standard cell design for low parasitics and its impact on VLSI prediction at 3-nm process
E Park, T Song - IEEE Transactions on Very Large Scale …, 2022 - ieeexplore.ieee.org
Complementary field-effect transistor (CFET) is a future transistor type with a high potential
to be used beyond 3-nm technology nodes. Despite its high future value, studies related to …
to be used beyond 3-nm technology nodes. Despite its high future value, studies related to …
Analytical model of CFET parasitic capacitance for advanced technology nodes
B Sun, Z Xu, R Ding, J Yang, K Chen… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The complementary field-effect transistor (CFET) with stacked N-type FET (NFET) and P-type
FET (PFET) is an attractive approach to shrink the footprint of multiple devices at circuit level …
FET (PFET) is an attractive approach to shrink the footprint of multiple devices at circuit level …
The Complementary FET (CFET) 6T-SRAM
This article discusses complementary FET (CFET)-based static random access memory
(SRAM) to achieve next-generation bitcell area scaling and performance gain in advanced …
(SRAM) to achieve next-generation bitcell area scaling and performance gain in advanced …
Investigation of novel hybrid channel complementary FET scaling beyond 3-nm node from device to circuit
Y Luo, Q Zhang, L Cao, W Gan, H Xu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Complementary FET (CFET) is a promising candidate for CMOS scaling beyond 3-nm
technology node. In this article, a novel hybrid channel CFET (HC-CFET) is proposed, which …
technology node. In this article, a novel hybrid channel CFET (HC-CFET) is proposed, which …
3D integration of 2D electronics
The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory
technology, and a similar transformative potential exists for logic circuits, by stacking …
technology, and a similar transformative potential exists for logic circuits, by stacking …
3-D modeling of fringe gate capacitance in complementary FET (CFET)
X Yang, Y Sun, Z Liu, Y Liu, X Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is
proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and …
proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and …