Analysis of temperature-dependent IV characteristics of the Au/n-GaSb Schottky diode
Gallium antimonide (GaSb) has been widely used for optoelectronic devices in recent years,
but the current transport mechanism at the metal-GaSb junction has not yet been clearly …
but the current transport mechanism at the metal-GaSb junction has not yet been clearly …
IVT measurements on GaAs/AlGaAs heterojunctions interpreted on the basis of thermally assisted tunneling
IVT data is routinely used to determine the conduction band discontinuity in heterojunction
structures. In the present paper, capacitance-voltage and current-voltage-temperature …
structures. In the present paper, capacitance-voltage and current-voltage-temperature …
Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)
In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is
presented, which is formed at 500° C by inserting IGZO between metal (Ni) and GaSb. The …
presented, which is formed at 500° C by inserting IGZO between metal (Ni) and GaSb. The …
[PDF][PDF] Annealing study of A1/GaSb contact with the use of doppler
HY Wang, HM Weng, CC Ling, BJ Ye, XY Zhou… - Phys. Rev. B, 1977 - Citeseer
Gallium antimonide is a narrow direct bandgap semiconductor suitable for fabricating high
frequency electronic devices and is also the basic material for fabricating a variety of lattice …
frequency electronic devices and is also the basic material for fabricating a variety of lattice …
Growth and properties of GaSb and Al/sub x/Ga/sub 1-x/Sb layers by MOCVD
AH Ramelan, K Drozdowicz-Tomsia… - 1998 Conference on …, 1998 - ieeexplore.ieee.org
A study of structural, electrical and optical properties of GaSb and Al/sub x/Ga/sub 1-x/Sb
(0.05/spl les/x/spl les/0.25) grown by metalorganic chemical vapour deposition on GaAs …
(0.05/spl les/x/spl les/0.25) grown by metalorganic chemical vapour deposition on GaAs …
[PDF][PDF] Annealing study of Al/GaSb contact with the use of Doppler broadening technique
HY Wang, HM Weng, CC Ling, BJ Ye… - … Physica Polonica A, 2005 - bibliotekanauki.pl
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was
performed by monitoring the Doppler broadening of the annihilation radiation as a function …
performed by monitoring the Doppler broadening of the annihilation radiation as a function …