On reliability of sic power devices in power electronics

DP Sadik - 2017 - diva-portal.org
Abstract Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor material which has
several advantages such as higher maximum electric field, lower ON-state resistance …

Static and dynamic performance of charge-carrier lifetime-tailored high-voltage SiC pin diodes with capacitively assisted switching

K Jacobs, M Bakowski, P Ranstad… - IEEE transactions on …, 2022 - ieeexplore.ieee.org
Recent advancements in the silicon carbide (SiC) power semiconductor technology offer
improvements for high-power converters, where today silicon (Si) devices are still dominant …

Introduction of SiC MOSFETs in converters based on Si IGBTs

DP Sadik, J Colmenares, JH Jürgensen… - 2017 IEEE 3rd …, 2017 - ieeexplore.ieee.org
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have
the potential to increase the power density in power electronics converters compared to the …

Experimental comparison of SiC MOSFET and BJT

Y Shi, S Liang, F Fang, J Wang - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
While silicon carbide (SiC) MOSFET is more popular for medium-voltage power
semiconductor devices today, the SiC BJT is still an attractive candidate for high-power, high …

Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

J Colmenares - 2016 - diva-portal.org
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-
nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching …