Compound copper chalcogenide nanocrystals

C Coughlan, M Ibanez, O Dobrozhan, A Singh… - Chemical …, 2017 - ACS Publications
This review captures the synthesis, assembly, properties, and applications of copper
chalcogenide NCs, which have achieved significant research interest in the last decade due …

Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials

Y Sutou, T Kamada, M Sumiya, Y Saito, J Koike - Acta materialia, 2012 - Elsevier
The crystallization kinetics of amorphous Ge1Cu2Te3 (GCT) films prepared by sputter
deposition were investigated by differential scanning calorimetry under non-isothermal …

Optical contrast and laser-induced phase transition in GeCu2Te3 thin film

Y Saito, Y Sutou, J Koike - Applied Physics Letters, 2013 - pubs.aip.org
Fast crystallization and low power amorphization are essential to achieve rapid data
recording and low power consumption in phase-change memory. This work investigated the …

Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization

NK Chen, XB Li, XP Wang, MJ Xia, SY Xie, HY Wang… - Acta Materialia, 2015 - Elsevier
Abstract Ge 1 Cu 2 Te 3 is an important candidate for high-temperature phase change
memory due to the fine amorphous stability. Yet, the basic bonding chemistry for its high …

Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory

T Kamada, Y Sutou, M Sumiya, Y Saito, J Koike - Thin Solid Films, 2012 - Elsevier
Phase change random access memory (PCRAM) requires an advanced phase change
material to lower its power consumption and to enhance its data retention and endurance …

Cu4TiTe4: Synthesis, Crystal Structure, and Chemical Bonding

A Lakshan, K Buxi, A Dutta, F Wang… - Inorganic Chemistry, 2023 - ACS Publications
A new compound Cu4TiTe4 in the Cu–Ti–Te ternary system is prepared using high-
temperature solid-state synthesis and characterized by single-crystal X-ray diffraction and …

Electronic Structure of Transition-Metal Based Cu2GeTe3 Phase Change Material: Revealing the Key Role of Cu d Electrons

Y Saito, Y Sutou, P Fons, S Shindo, X Kozina… - Chemistry of …, 2017 - ACS Publications
The electronic structure of the as-deposited amorphous and crystalline phases of transition-
metal based Cu2GeTe3 phase-change memory material has been systematically …

Phase change characteristics in GeTe–CuTe pseudobinary alloy films

Y Saito, Y Sutou, J Koike - The Journal of Physical Chemistry C, 2014 - ACS Publications
Phase change characteristics in GeTe–CuTe pseudobinary alloy films, including GeCu2Te3
(GCT), were investigated. The crystallization temperature of the amorphous film increased …

Fourfold coordinated Te atoms in amorphous GeCu2Te3 phase change material

P Jóvári, Y Sutou, I Kaban, Y Saito, J Koike - Scripta Materialia, 2013 - Elsevier
Amorphous GeCu 2 Te 3 was investigated by X-ray diffraction and extended X-ray
absorption fine structure measurements at the Ge, Cu and Te K-edges. Structural models …

Origin of the unusual reflectance and density contrasts in the phase-change material Cu2GeTe3

JM Skelton, K Kobayashi, Y Sutou, SR Elliott - Applied Physics Letters, 2013 - pubs.aip.org
The recent demonstration of Cu 2 GeTe 3 (CGT) as a potential phase-change material
(PCM) for next-generation non-volatile memories represents a significant discovery. In …