[图书][B] Metrology and Diagnostic Techniques for Nanoelectronics

Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

N Fang, K Nagashio - Journal of Physics D: Applied Physics, 2018 - iopscience.iop.org
Although MoS 2 field-effect transistors (FETs) with high-k dielectrics are promising for
electron device applications, the underlying physical origin of interface degradation remains …

[HTML][HTML] Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

T Hao, B Zeng, Z Sun, Z Wang, Y Jiang, Q Peng… - APL Materials, 2024 - pubs.aip.org
HfO 2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most
promising non-volatile memory technologies in the future. However, the charge trapping …

Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals

Z Qin, L Xu, P Liu, Z Liang, R Yu, L Liang, Y Wang… - Vacuum, 2024 - Elsevier
GaSb is regarded as one of the most promising near-infrared optoelectronic materials in
recent years. However, due to the ease of natural oxidation of GaSb, the surface will …

Effect of perforation on the sensing properties of monolayer-capped metallic nanoparticle films

M Segev-Bar, G Shuster, H Haick - The Journal of Physical …, 2012 - ACS Publications
We report on the effect of perforation within a monolayer-capped metallic nanoparticle
(MCNP) film on sensing of volatile organic compounds (VOCs) and water molecules. Our …

Morphology engineering of conductive metallic nanoparticles capped with an organic coating

H Haick, M Segev-bar, G Shuster… - US Patent 10,663,420, 2020 - Google Patents
The present invention is directed to a sensor having continuous and discontinuous regions
of conductive metallic nanoparticles capped with an organic coating which enables the …

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

X Sun, Y Zhang, J Xiang, K Han, X Wang… - … on Electron Devices, 2021 - ieeexplore.ieee.org
We theoretically investigated the effect of interface traps (D it) at the Si/SiO 2 interface on the
transient negative capacitance (NC) effect of the ferroelectric (FE) FETs. We used a …

Interface traps density extraction through transient measurements in junctionless transistors

ET Da Fonte, R Trevisoli, S Barraud, RT Doria - Solid-State Electronics, 2022 - Elsevier
This paper presents an extraction method for the interface traps density on Junctionless
Transistors (JNTs) using an adapted charge pumping technique. To the best of our …

Determination of interface states in metal (Ag, TiN, W)− Hf: ta2O5/SiOxNy− Si structures by different compact methods

N Novkovski - Materials Science in Semiconductor Processing, 2015 - Elsevier
In this work a compact set of analytical methods for determination of the interface state
densities of metal-insulator-silicon structures containing ultrathin dielectrics is constructed …

[HTML][HTML] Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

T Gotow, S Fujikawa, HI Fujishiro, M Ogura… - AIP Advances, 2017 - pubs.aip.org
A clean and flat GaSb surface without native oxides has been attained by H 2 plasma
cleaning and subsequent in-situ N 2 plasma nitridation process at 300 o C. The mechanisms …