3d commutation-loop design methodology for a silicon-carbide based 15 kw, 380: 480 v matrix converter with pcb aluminum nitride cooling inlay
Wide-bandgap devices like silicon-carbide (SiC) MOSFETs and gallium nitride (GaN)
HEMTs feature fast switching speed, low switching losses, and higher operating …
HEMTs feature fast switching speed, low switching losses, and higher operating …